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| @vic SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 FEATURES Power dissipation PCM: TRANSISTOR (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 0.3 W (Tamb=25) 0. 95 1. 0 - 2. 4 1. 3 Collector current ICM: -0.6 A Collector-base voltage -160 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 2. 9 1. 9 0. 95 Unit: mm unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) Ic= -100 A, IE=0 Ic= -1 mA, IB=0 IE= -10A, IC=0 VCB=-120V, IE=0 VEB=-4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC=-10mA VCE= -5V, IC=-50mA IC=-50mA, IB= -5mA IC= -50mA, IB= -5mA VCE= -5V, IC= -10mA -160 -150 -5 -0.1 -0.1 80 100 50 -0.5 -1 200 0. 4 V V V A A DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter voltage Transition frequency saturation VCE(sat) VBE(sat) V V fT f=30MHz 100 MHz DEVICE MARKING MMBT5401LT1=2L |
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