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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * low profile surface mounting package
BYV40E series
SYMBOL
QUICK REFERENCE DATA VR = 150 V/ 200 V
a1 1 k2
a2 3
VF 0.7 V IO(AV) = 1.5 A IRRM = 0.1 A trr 25 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV40E series is supplied in the SOT223 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV40E Tsp 120C MIN. -150 150 150 150 1.5 1.5 6 6.6 MAX. -200 200 200 200 UNIT V V V A A A A
IRRM IRSM Tstg Tj
square wave; = 0.5; Tsp 132C t = 25 s; = 0.5; Tsp 132 C tp = 10 ms tp = 8.3 ms sinusoidal; Tj = 150C prior to surge; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature
-65 -
0.1 0.1 150 150
A A C C
1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. -
BYV40E series
MAX. 8
UNIT kV
THERMAL RESISTANCES
SYMBOL Rth j-sp Rth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS one or both diodes conducting pcb mounted; minimum footprint pcb mounted; pad area as in fig:11 MIN. TYP. 156 70 MAX. 15 UNIT K/W K/W K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 0.5 A; Tj = 150C IF = 1.5 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 2 A; dIF/dt = 20 A/s MIN. TYP. 0.50 0.82 100 5 10 3 MAX. 0.7 1.0 300 10 11 25 20 UNIT V V A A nC ns ns V
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV40E series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
1
PF / W
Vo = 0.66 V Rs = 0.08 Ohms
BYV40
Tsp(max) / C
135
0.8 0.5
D = 1.0
138
0.6
141
time
0.2
VF V VF time fr
0.4
0.1
I tp tp D= T t
144
0.2
T
147
0
0
0.2
0.4
0.6 0.8 IF(AV) / A
1
1.2
150 1.4
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.66 V Rs = 0.08 Ohms
R
0.7 0.6 0.5
BYV40
Tsp(max) / C
139.5 141 142.5 144 145.5 147 148.5
a = 1.57 1.9 2.2 2.8 4
D.U.T. Voltage Pulse Source
0.4 0.3
Current shunt
0.2
to 'scope
0.1 0
0
0.1
0.2
0.3
0.4 0.5 IF(AV) / A
0.6
0.7
150 0.8
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV40E series
trr / ns 1000
100
Qs / nC
100
IF = 2A 1A
IF=2A 10 IF=1A
10
1 1 10 dIF/dt (A/us) 100
1 1 10 dIF/dt(A/us) 100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.9. Maximum Qs at Tj = 25 C; per diode
IF / A 3 Tj=25C Tj=150C 2 TYP 1 MAX
100
Transient thermal impedance, Zth j-sp (K/W)
10
1
0.1
P D
tp
D=
tp T t 1s 10s
0 0
0.5
VF / V
1.0
1.5
0.01 1us
T 10us 100us 1ms 10ms pulse width, tp (s) 100ms
BYV40E
Fig.8. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.10. Transient thermal impedance; per diode; Zth j-sp = f(tp).
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 0.11 g
0.32 0.24 6.7 6.3 3.1 2.9 B
BYV40E series
0.2
M
A
4
A
0.10 0.02
3.7 3.3 13
7.3 6.7
16 max
1
10 max 1.8 max 1.05 0.85 4.6 2.3
2
0.80 0.60
3
0.1 M (4x) B
Fig.11. SOT223 surface mounting package.
Notes 1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 750 00505. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV40E series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1998
6
Rev 1.300

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