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| UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) 3 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG LIMITS -80 -80 -5 -0.5 0.2 150 -55 ~ +150 UNIT V V V A W C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob TEST CONDITIONS Ic= -50A Ic= -2mA IE= -50A VCB= -50V VEB= -4V Ic/IB= -0.5A/-50mA VCE= -3V,Ic= -0.1A VCE=-10V,IE= 50 mA, f=100MHz VCB= -10V, IE= 0 A, f=1MHz MIN -80 -80 -5 TYP MAX UNIT V V V A A V MHz pF -0.2 120 180 11 -0.5 -0.5 -0.5 390 CLASSIFICATION OF hFE RANK RANGE MARKING Q 120-270 AKQ R 180-390 AKR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R206-040,A UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR Figure 2.Grounded Emitter OutputCharacteristics -0.5 -45mA -40mA -0.4 -35mA -30mA -0.3 -25mA -20mA -0.2 -0.1 0 0 IB =0mA -0.4 -0.8 -1.2 -1.6 -2.0 Collector toEmitter Voltage:V CE (V) Figure4.Collector-emitter Saturation Voltage vs.Collector Current (I) T a=25 T a=25 -5.0mA ELECTRICAL CHARACTERISTICS CURVES Figure 1.Grounded Emitter PropagationCharacteristics -10 -5 Collector Current: Ic(mA) -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 T a=100 T a=25 T a= -25 VCE = -3V Collector Current: Ic(A) -1.5mA -1.0mA -0.5mA -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base toEmitter Voltage:V BE (V) Figure 3.DC Current Gain vs.Collector Current VCE= -3V T a=100 T a=25 T a= -25 Collector Saturation Voltage:VCE(sat) ( V) 1000 500 DC Current Gain:hFE 200 100 50 -2 -1 -500m -200m -100m -50m Ic/IB=50 20 10 20 10 -1m Collector Saturation Voltage:VCE (sat) ( V) -20m -10m -1 -10 -100 -1A Collector Current : Ic(mA) Figure6.Collector-emitter Saturation Voltage vs.Collector Current (III) Ic/I =20 B Collector Saturation Voltage:VCE(sat) ( V) -2 -1 -500m -200m -10m -100m -1 Collector Current : Ic(A) Figure5.Collector-emitter Saturation Voltage vs.Collector Current (II) Ic/I =10 B -2 -1 -500m -200m -100m -50m T a=100 -100m -50m T a=25 T a= -25 T a=100 T a=25 T a= -25 -20m -10m -1 -10 -100 Collector Current : Ic(mA) -1A -20m -10m -1 -10 -100 Collector Current : Ic(mA) -1A UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R206-040,A UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR Figure 8. Gain Bandwidth Product vs.Emitter Current 1000 Transetion Frequency :fT (MHz) 500 Ta= 25 VCE= -10V Figure 7.Collector-emitter Saturation Voltage vs.Collector Current (IV) Collector Saturation Voltage:V CE(sat) ( V) -10 -5 -2 -1 -500m -200m -100m -50m -20m -10m -1 -100 -10 Collector Current : Ic(mA) Figure9.Collector Output Capacitance vs.Collector-Base Voltage Emitter Input Capacitance vs.Emitter-Base Voltage Ta=25 f =1MHz IE=0A Ic=0A -1A 10 1m Ta= -25 Ta=100 Ta= 25 Ic/IB=50 200 100 50 20 10m 100m Emitter Current : IE (mA) 1 Collector Output Capacitance :Cob (pF) 1000 Emitter Input Capacitance :Cib (pF) 500 200 100 50 20 10 5 2 1 -0.1 -1 -10 -100 Collector to Base Voltage:V (V) CB Emitter to Base Voltage:V (V) EB UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-040,A |
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