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FDS7766S
June 2003
FDS7766S
30V N-Channel PowerTrench(R) MOSFET
General Description
The FDS7766S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7766S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
* 17 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V RDS(ON) = 6.5 m @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching
Applications
* Synchronous rectifier * DC/DC converter
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 16
(Note 1a)
Units
V V A W
17 60 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDS7766S Device FDS7766S Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2003 Fairchild Semiconductor Corporation
FDS7766S Rev C (W)
FDS7766S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 15 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
23 500 100 mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 1 mA ID = 15 mA, Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, ID = 17 A ID = 15.5 A ID = 17 A, TJ = 125C VDS = 5 V
1
1.3 -2 4.0 4.6 5.7
3
V mV/C
5.5 6.5 7.2
m
ID(on) gFS
30 91
A S
VDS = 10 V, ID = 17 A
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
4785 825 290 1.3
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
12 12 82 30
22 22 132 49 58
ns ns ns ns nC nC nC
VDS = 15 V, ID = 17 A, VGS = 5 V
41 11 9
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr
Notes:
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A Voltage Schottky Diode Reverse Recovery IF = 17 A, diF/dt = 300 A/s
3.5
(Note 2)
A V ns nC
0.4 27
0.7
(Note 2)
28
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when mounted on a 1in2 pad of 2 oz copper
b) 105C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS7766S Rev C (W)
FDS7766S
Typical Characteristics
60
VGS = 10V 3.0V 4.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 2 VGS = 2.5V
50 ID, DRAIN CURRENT (A)
6.0V
40 30 20 10
2.0V
1.6 3.0V 1.4 3.5V 1.2 4.5V 6.0V 1 10V
0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5
0.8 0 10 20 30 40 ID, DRAIN CURRENT (A) 50 60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 17A VGS =10V
ID = 8.5A 0.016
1.4
1.2
0.012 TA = 125oC 0.008
1
0.8
0.004
TA = 25oC
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0 1 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10
Figure 3. On-Resistance Variation withTemperature.
50
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V
ID, DRAIN CURRENT (A)
40
10
30
TA = 125oC
1
TA = 125oC 25oC
20
25oC -55 C
o
10
0.1 -55oC 0.01
0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3
0
0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
0.7
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7766S Rev C (W)
FDS7766S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 17A 8 5000 VDS = 10V CAPACITANCE (pF) 4000 Ciss 6000 f = 1MHz VGS = 0 V
6 15V 4
20V
3000
2000 Coss 1000 Crss
2
0 0 20 40 Qg, GATE CHARGE (nC) 60 80
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
100us 1ms 10ms 100ms 1s
ID, DRAIN CURRENT (A)
40
10
SINGLE PULSE RJA = 125C/W TA = 25C
30
1
10s DC VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W
0.1
0.1 0.05
P(pk
0.02 0.01
0.01
SINGLE PULSE
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7766S Rev C (W)
FDS7766S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7766S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1
IDSS, REVERSE LEAKAGE CURRENT (A)
TA = 125oC
0.01
TA = 100oC
0.001
0.0001
0.8A/div
TA = 25oC
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
12.5 nS/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7766).
0.8A/div
12.5 nS/div
Figure 13. Non-SyncFET (FDS7766) body diode reverse recovery characteristic.
0.08A/
Figure 12. FDS7766S SyncFET body diode reverse recovery characteristic.
FDS7766S Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST CoolFETTM FASTrTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM
DISCLAIMER
ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I3

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