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| BF 820, BF 822 NPN High Voltage Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Dimensions / Mae in mm 1=B 2=E 3=C 250 mW SOT-23 (TO-236) 0.01 g Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open Grenzwerte (TA = 25/C) BF 820 VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS 300 V 300 V 5V 250 mW 1) 50 mA 100 mA 50 mA 150/C - 65...+ 150/C BF 822 250 V 250 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 200 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 30 mA, IB = 5 mA IEB0 VCEsat - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 10 nA 10 :A 50 nA 600 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 2 01.11.2003 1 High Voltage Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 20 V, IC = 25 mA Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz VCB = 30 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren fT CCB0 60 MHz - RthA - hFE 50 - BF 820, BF 822 Kennwerte (Tj = 25/C) Typ. Max. - - - 420 K/W 2) BF 821, BF 823 Collector-Base Capacitance - Kollektor-Basis-Kapazitat 1.6 pF Marking - Stempelung BF 820 = 1V BF 822 = 1X ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 3 |
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