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| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR MGFC5214 Q-Band 2-Stage Power Amplifier Performance Characteristics (Ta=25C) Specification Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size 5 0 2.0x1.6 (23) 2.0 2.0 V V mm2 Min. 37 12 Typical Max. 40 Unit GHz dB dBm Circuit Topology GND Vg1 Vd1 Vg2 Vd2 RFin RFout ( ):Design Target (Now Evaluating) GND (Vg1) Vd1 Vg2 Vd2 Measured S-Parameters vs Frequency 30 20 10 0 -10 -20 -30 30 35 40 45 50 S22 S11 Vd1, Vd2=5V Vg1, Vg2=0V Id1=178mA, Id2=346mA GAIN Frequency (GHz) MITSUBISHI ELECTRIC |
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