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| VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) -60 rDS(on) Max (W) 5 @ VGS = -10 V VGS(th) (V) -2 to -4.5 ID (A) -0.41 Features D D D D D High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: -3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Benefits D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer0 Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control Dual-In-Line D1 P S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 Top View Plastic: VQ2004J 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 P P Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Single -60 "30 -0.41 -0.23 -3 1.3 0.52 96 Total Quad Unit V A 2 0.8 62.5 -55 to 150 W _C/W _C Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70220. Siliconix P-37655--Rev. B, 25-Jul-94 1 VQ2004J Specificationsa Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate Body Leakage Gate-Body V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "30 V TJ = 125_C VDS = -60 V, VGS = 0 V VDS = -48 V, VGS = 0 V, TJ = 125_C VDS = -10 V, VGS = -10 V VGS = -10 V, ID = -1 A TJ = 125_C VDS = -10 V, ID = -0.5 A VDS = -7.5 V, ID = -0.1 A 200 -1 -2 2.5 4.4 325 0.45 mS 5 8 -60 -2 -110 -3.4 V -4.5 "100 "500 -10 -500 nA Symbol Test Conditions Min Typb Max Unit Zero Gate Voltage Drain Current On-State Drain Currentc Drain Source On-Resistancec Drain-Source On Resistance Forward Transconductance c Common Source Output Conductancec IDSS ID(on) rDS( ) DS(on) gfs gos mA A W Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -25 V, VGS = 0 V 25 V f = 1 MHz 75 40 18 150 60 25 pF Switchingd Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = -25 V, RL = 47 W ID ^ -0 5 A VGEN = -10 V -0.5 A, RG = 25 W 11 30 20 20 15 40 ns 30 30 VPDV10 2 Siliconix P-37655--Rev. B, 25-Jul-94 VQ2004J Typical Characteristics (25_C Unless Otherwise Noted) Ohmic Region Characteristics -2.0 TJ = 25_C -1.6 I D - Drain Current (A) VGS = -10 V I D - Drain Current (mA) -9 V -8 V -7 V -0.8 -6 V -0.4 -5 V -4 V 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) -0.5 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) -16 -20 TJ = 25_C VGS = -4.0 V Output Characteristics for Low Gate Drive -1.2 -12 -3.8 V -8 -3.6 V -3.4 V -3.2 V -4 Transfer Characteristics 7 TJ = -55_C rDS(on) - On-Resistance ( W ) 6 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C -0.4 I D - Drain Current (A) VDS = -10 V -0.3 25_C 125_C I D = 0.1 A 5 4 3 2 1 0.5 A 1.0 A -0.2 -0.1 0 0 -2 -4 -6 -8 -10 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 10 rDS(on) - Drain-Source On-Resistance (W ) On-Resistance vs. Drain Current rDS(on) - Drain-Source On-Resistance (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 Normalized On-Resistance vs. Junction Temperature VGS = -10 V ID = 0.5 A 8 6 4 VGS = -10 V 2 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 ID - Drain Current (A) -50 -10 30 70 110 150 TJ - Junction Temperature (_C) Siliconix P-37655--Rev. B, 25-Jul-94 3 VQ2004J Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) -10 VDS = -5 V I D - Drain Current (mA) 160 -1 TJ = 150_C 25_C 125_C -0.1 -55_C C - Capacitance (pF) Threshold Region 200 VGS = 0 V f = 1 MHz Capacitance 120 Ciss 80 Coss 40 Crss -0.01 -1.0 0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -10 -20 -30 -40 -50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge -15.0 VGS - Gate-to-Source Voltage (V) -12.5 -10.0 VDS = -50 V -7.5 -5.0 -2.5 0 0 100 200 300 400 500 Qg - Total Gate Charge (pC) 1 -0.1 -80 V ID = -0.5 A t - Switching Time (ns) 100 Load Condition Effects on Switching tr tf td(off) 10 td(on) VDD = -25 V RL = 25 W VGS = 0 to -10 V (Pulse) -1.0 ID - Drain Current (A) 100 Drive Resistance Effects on Switching g fs - Forward Transconductance (mS) tr 500 Transconductance TJ = -55_C t - Switching Time (ns) tf td(off) 10 td(on) 400 25_C 300 125_C 200 VDD = -25 V RL = 50 W VGS = 0 to -10 V ID = -500 mA 1 10 RG - Gate Resistance (W) 100 100 0 0 -100 -200 -300 -400 -500 ID - Drain Current (A) 4 Siliconix P-37655--Rev. B, 25-Jul-94 |
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