Part Number Hot Search : 
CXA2002 UM82C55A AN4140 MKT1816 FRS12W 152M10 04A40 1205DH3
Product Description
Full Text Search
 

To Download 2SD2275 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Power Transistors
2SD2275
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1502
3.30.2 5.00.3 3.0
Unit: mm
20.00.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.00.5 2.5
2.00.3 3.00.3 1.00.2
(TC=25C)
Ratings 120 100 5 8 5 60 3.5 150 -55 to +150 Unit V V V A
2.70.3
0.60.2 5.450.3 10.90.5
1
2
3
A W C C
1:Base 2:Collector 3:Emitter TOP-3L Package
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 120V, IE = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 4mA IC = 4A, IB = 4mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 4mA, IB2 = -4mA, VCC = 50V 20 2.5 3.5 1.0 100 2000 5000 30000 2.5 3.0 V V MHz s s s min typ max 100 100 100 Unit A A A V
FE2
Rank classification
Q S P
Rank hFE2
5000 to 15000 7000 to 21000 8000 to 30000
2.0
1.5
Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V
26.00.5
10.0
2.0
4.0
3.0
1
Power Transistors
PC -- Ta
80 6 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) IB=0.8mA 0.7mA 4 0.6mA 0.5mA 3 0.4mA 0.3mA 2 0.2mA
2SD2275
IC -- VCE
100
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000
Collector power dissipation PC (W)
70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1)
5
30
Collector current IC (A)
10
3 TC=-25C 1 100C 0.3 25C
1
0.1mA
0 60 80 100 120 140 160 0 2 4 6 8 10 12
0.1 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=1000 100000
hFE -- IC
1000
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=5V IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
30000
30
300
10000
10 TC=100C 3
100
3000 TC=100C 1000 25C 300 -25C 100 30 10 0.01 0.03
25C -25C
30
1
10
0.3
3
0.1 0.1
1 0.1 0.3 1 3 10 1 3 10 30 100
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=-IB2) VCC=50V TC=25C tstg 3 ton 1 tf 0.3 0.1 0.03 0.01 0 2 4 6 8
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C ICP 10ms 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 IC DC t=1ms
Switching time ton,tstg,tf (s)
Collector current IC (A)
10
10
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
1000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1)
2SD2275
Thermal resistance Rth(t) (C/W)
10
(2)
1
0.1 10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
This datasheet has been download from: www..com Datasheets for electronics components.


▲Up To Search▲   

 
Price & Availability of 2SD2275

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X