 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDS8984 N-Channel PowerTrench(R) MOSFET February 2006 FDS8984 N-Channel PowerTrench(R) MOSFET 30V, 7A, 23m General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features Max rDS(on) = 23m, VGS = 10V, ID = 7A Max rDS(on) = 30m, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested LE A REE I DF RoHS Compliant MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Single Pulse Avalache Energy Power Dissipation for Single Operation Derate above 25C Operating and Storage Temperature (Note 2) (Note 1a) Ratings 30 20 7 30 32 1.6 13 -55 to 150 Units V V A A mJ W mW/C C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDS8984 Rev. A M ENTATIO LE N MP D1 D D1 D DD2 D2 D 5 6 Q2 4 3 2 Q1 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 7 8 S 1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V VGS = 0V TJ = 125C 30 23 1 250 100 V mV/C A nA VGS = 20V,VDS = 0V On Characteristics (Note 3) VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VDS = VGS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 7A VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A, TJ = 125C 1.2 1.7 - 4.3 19 24 26 23 30 32 m 2.5 V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f = 1MHz 475 100 65 0.9 635 135 100 1.6 pF pF pF Switching Characteristics (Note 3) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 10V, ID = 7A VDS = 15V, VGS = 5V, ID = 7A VDD = 15V, ID = 7A VGS = 10V, RGS = 33 5 9 42 21 9.2 5.0 1.5 2.0 10 18 68 34 13 7 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ISD = 7A ISD = 2.1A IF = 7A, di/dt = 100A/s 0.9 0.8 1.25 1.0 33 20 V V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of oz copper c) 135C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%. 2 FDS8984 Rev. A www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ 30 = 25C unless otherwise noted 3.0 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED VGS=10V PULSE DURATION =80S DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V VGS=4.5V VGS=4.0V VGS=3.0V DRAIN-SOURCE ON-RESISTANCE 2.5 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 20 VGS=3.0V VGS=3.5V VGS=4.0V VGS=4.5V 2.0 10 1.5 1.0 VGS=5.0V 0.5 VGS=10V 25 30 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 10 15 20 Figure 1. On Region Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 2. On-Resistance vs Drain Current and Gate Voltage 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 7A VGS = 10V 55 50 45 40 35 30 25 20 15 2 ID=7A PULSE DURATION=80s DUTY CYCLE=0.5% MAX TJ = 150 C O TJ = 25 C 4 6 8 10 O -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance vs Temperature Figure 4. On-Resistance vs Gate to Source Votlage 30 IS, REVERSE DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 10 VGS = 0V VDD = 5V TJ = 150 C O 1 TA = 150oC TJ = 25oC 0.1 TJ = -55oC TJ = 25 C TJ = - 55 C O O 0.01 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS8984 Rev. A www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ VGS, GATE TO SOURCE VOLTAGE(V) = 25C unless otherwise noted 700 600 CISS 10 8 CAPACITANCE (pF) 6 4 2 0 VDD = 10V VDD = 15V 500 400 300 200 100 f = 1MHz VGS = 0V VDD = 20V COSS CRSS 1 10 30 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 8 IAS, AVALANCHE CURRENT (A) 10 STARTING TJ = 25 C O ID, DRAIN CURRENT (A) 7 6 5 4 3 2 1 VGS=4.5V VGS=10V STARTING TJ = 125 C 1 0.01 0.1 1 10 20 O tAV, TIME IN AVALANCHE (mS) 0 25 50 75 100 125 o 150 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) 10us Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 3000 1000 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 100us P(PK), PEAK TRANSIENT POWER (W) 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms 10ms 100ms 1s DC 100 VGS=10V I = I25 150 - T A ----------------------125 0.1 10 SINGLE PULSE 0.01 0.1 SINGLE PULSE TJ = MAX RATED TA = 25oC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 -5 10 10 -4 10 -3 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDS8984 Rev. A www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ 2 1 = 25C unless otherwise noted DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 Normalized Thermal Impedance ZJC 0.1 0.01 PDM t1 1E-3 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1E-4 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve 5 FDS8984 Rev. A www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production FDS8984 Rev. A 6 www.fairchildsemi.com |
Price & Availability of FDS8984
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |