View BCR19PN_832141.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BCR19PN
NPN/PNP Silicon Digital Transistor Array
4
Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=4.7k)
5 6
Tape loading orientation
C1 B2 5 E2 4

2 1
3
VPS05604
Top View 654 W1s 123 Direction of Unreeling
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
6
R1 TR1
R1 TR2
Position in tape: pin 1 opposite of feed hole side
EHA07193
1 E1
2 B1
3 C2
EHA07290
Type BCR19PN
Maximum Ratings Parameter
Marking W2s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 10 15 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature
mA mW C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCR19PN
Electrical Characteristics at TA=25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 Vi(on) Vi(off) VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
50 50 10 120 0.4 0.5 3.2
4.7
100 630 0.3 0.8 1.1 6.2
V
nA V
k
AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 150 MHz
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001
BCR19PN NPN Type
DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10 3
-
VCEsat = f (IC), hFE = 20
10 2
mA
10 2
hFE
10 1
10 1
IC
10 0 10 0 10 -1 -1 10
0 1
10
10
mA
10
2
10 -1 0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC)
VCE = 0.3V (common emitter configuration)
10 2
VCE = 5V (common emitter configuration)
10 2
mA
mA
10 1
10 1
IC
IC
10 0 10 -1 -1 10
0 1
10 0
10 -1
10 -2
10
10
V
10
2
10 -3 0
1
2
3
V
5
Vi(on)
Vi(off)
3
Nov-29-2001
BCR19PN PNP Type
DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10 3
VCEsat = f (IC), hFE = 20
10 2
-
mA
hFE
10 2
10 1
10 1
IC
10 0 10 0 -1 10
0 1
10
10
mA
10
2
10 -1 0.00
0.10
0.20
0.30
0.40
V
0.55
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage V i(off) = f (IC)
VCE = 5V (common emitter configuration)
10 2
mA
VCE = 0.3V (common emitter configuration)
10 2
mA
10 1
10 1
IC
IC
10 0 10 -1 -1 10
0 1
10 0
10 -1
10 -2
10
10
V
10
2
10 -3 0
1
2
3
V
5
Vi(on)
Vi(off)
4
Nov-29-2001
BCR19PN
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Nov-29-2001

▲Up To Search▲

Price & Availability of BCR19PN

	To Download BCR19PN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .