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NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier
The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications. Constant impedance of the buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the change of offset voltage due to a burst in the bias current IABC, hence eliminating the audible noise that could otherwise be heard in high quality audio applications.
Features http://onsemi.com MARKING DIAGRAMS
1
SOIC-16 D SUFFIX CASE 751B 1
xx5517DG AWLYWW
* * * * * * * * * * * *
Constant Impedance Buffers DVBE of Buffer is Constant with Amplifier IBIAS Change Excellent Matching Between Amplifiers Linearizing Diodes High Output Signal-to-Noise Ratio Pb-Free Packages are Available*
1
PDIP-16 N SUFFIX CASE 648 1
NE5517yy AWLYYWWG
Applications
Multiplexers Timers Electronic Music Synthesizers Dolby(R) HX Systems Current-Controlled Amplifiers, Filters Current-Controlled Oscillators, Impedances
xx yy A WL YY, Y WW G
= AU or NE = AN or N = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package
PIN CONNECTIONS
N, D Packages
IABCa 1 Da 2 +INa 3 -INa 4 VOa 5 V- 6 INBUFFERa 7 16 15 14 13 12 11 10 9 IABCb Db +INb -INb VOb V+ INBUFFERb VOBUFFERb
VOBUFFERa 8
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
1
April, 2006 - Rev. 3
Publication Order Number: NE5517/D
NE5517, NE5517A, AU5517
PIN DESCRIPTION
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol IABCa Da +INa -INa VOa V- INBUFFERa VOBUFFERa VOBUFFERb INBUFFERb V+ VOb -INb +INb Db IABCb Amplifier Bias Input A Diode Bias A Non-inverted Input A Inverted Input A Output A Negative Supply Buffer Input A Buffer Output A Buffer Output B Buffer Input B Positive Supply Output B Inverted Input B Non-inverted Input B Diode Bias B Amplifier Bias Input B Description
V+ 11 D4 Q6 D6 Q14 Q10 Q12 7,10 Q13 8,9 Q7 Q11
2,15 D2 -INPUT 4,13 1,16 AMP BIAS INPUT Q4 Q5 D3 +INPUT 3,14 VOUTPUT 5,12
Q15 Q2 Q9 R1 Q1 D1 D5 Q8
Q16 D7
Q3
D8
V- 6
Figure 1. Circuit Schematic
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NE5517, NE5517A, AU5517
B AMP BIAS INPUT 16 B DIODE BIAS 15 B INPUT (+) 14 B INPUT (-) 13 B OUTPUT 12 B BUFFER INPUT 10 B BUFFER OUTPUT 9
V+ (1) 11
- B +
+ A -
1 AMP BIAS INPUT A
2 DIODE BIAS A
3 INPUT (+) A
4 INPUT (-) A
5 OUTPUT A
6 V-
7 BUFFER INPUT A
8 BUFFER OUTPUT A
NOTE:
V+ of output buffers and amplifiers are internally connected.
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating Supply Voltage (Note 1) Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D Thermal Resistance, Junction-to-Ambient D Package N Package Differential Input Voltage Diode Bias Current Amplifier Bias Current Output Short-Circuit Duration Buffer Output Current (Note 3) Operating Temperature Range NE5517N, NE5517AN AU5517T Operating Junction Temperature DC Input Voltage Storage Temperature Range Lead Soldering Temperature (10 sec max) Symbol VS PD 1500 1125 RqJA C/W 140 94 5.0 2.0 2.0 Indefinite 20 0 C to +70 C -40 C to +125 C 150 +VS to -VS -65 C to +150 C 230 C C mA C V mA mA Value 44 VDC or 22 Unit V mW
VIN ID IABC ISC IOUT Tamb
TJ VDC Tstg Tsld
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. For selections to a supply voltage above 22 V, contact factory. 2. The following derating factors should be applied above 25 C N package at 10.6 mW/C D package at 7.1 mW/C. 3. Buffer output current should be limited so as to not exceed package dissipation.
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NE5517, NE5517A, AU5517
ELECTRICAL CHARACTERISTICS (Note 4)
AU5517/NE5517 Characteristic Input Offset Voltage Overtemperature Range IABC 5.0 mA DVOS/DT VOS Including Diodes Input Offset Change Input Offset Current DIOS/DT Input Bias Current Overtemperature Range DIB/DT Forward Transconductance Overtemperature Range gM Tracking Peak Output Current RL = 0, IABC = 5.0 mA RL = 0, IABC = 500 mA RL = 0, Overtemperature Range RL = , 5.0 mA IABC 500 mA RL = , 5.0 mA IABC 500 mA IABC = 500 mA, both channels D VOS/D V+ D VOS/D V- CMRR 80 12 Referred to Input (Note 5) 20 Hz < f < 20 kHz IABC = 0, Input = 4.0 V IABC = 0 (Refer to Test Circuit) RIN BW Unity Gain Compensated 5 5 Refer to Buffer VBE Test Circuit (Note 6) SR INBUFFER VOBUFFER 10 0.5 5.0 10 IIN IOUT 350 300 VOUT +12 -12 ICC +14.2 -14.4 2.6 20 20 110 13.5 100 0.02 0.2 26 2.0 50 0.4 5.0 10 0.5 5.0 100 100 10 4.0 150 150 80 12 +12 -12 +14.2 -14.4 2.6 20 20 110 13.5 100 0.02 0.2 26 2.0 50 0.4 5.0 10 5.0 4.0 150 150 dB V dB nA nA kW MHz V/ms mA V mV mA mV/V Avg. TC of Input Current gM 6700 5400 Avg. TC of Input Offset Current IBIAS Avg. TC of Input Offset Voltage Diode Bias Current (ID) = 500 mA 5.0 mA IABC 500 mA VOS IOS Test Conditions Symbol VOS Min Typ 0.4 0.3 7.0 0.5 0.1 0.1 0.001 0.4 1.0 0.01 9600 0.3 5.0 500 650 3.0 350 300 13000 7700 4000 5.0 8.0 0.6 5 Max 5.0 5.0 Min NE5517A Typ 0.4 0.3 7.0 0.5 0.1 0.1 0.001 0.4 1.0 0.01 9600 0.3 5.0 500 V 7.0 650 12000 5.0 7.0 2.0 3.0 0.6 Max 2.0 5.0 2.0 Unit mV
mV/C mV mV mA mA/C mA mA/C mmho dB mA
Peak Output Voltage Positive Negative Supply Current VOS Sensitivity Positive Negative Common-mode Rejection Ration Common-mode Range Crosstalk Differential Input Current Leakage Current Input Resistance Open-loop Bandwidth Slew Rate Buffer Input Current Peak Buffer Output Voltage DVBE of Buffer
4. These specifications apply for VS = 15 V, Tamb = 25C, amplifier bias current (IABC) = 500 mA, Pins 2 and 15 open unless otherwise specified. The inputs to the buffers are grounded and outputs are open. 5. These specifications apply for VS = 15 V, IABC = 500 mA, ROUT = 5.0 kW connected from the buffer output to -VS and the input of the buffer is connected to the transconductance amplifier output. 6. VS = 15, ROUT = 5.0 kW connected from Buffer output to -VS and 5.0 mA IABC 500 mA.
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NE5517, NE5517A, AU5517
TYPICAL PERFORMANCE CHARACTERISTICS
10 3 INPUT OFFSET CURRENT (nA) VS = 15V
+125C -55C
5 4 INPUT OFFSET VOLTAGE (mV) 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 0.1mA
+25C +125C
10 4 VS = 15V VS = 15V INPUT BIAS CURRENT (nA) 10 3
10
2
-55C
10
+25C +125C
10
2
-55C
1
10
+125C +25C
0.1 1mA 10mA 100mA 1000mA 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (IABC)
1 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (IABC)
AMPLIFIER BIAS CURRENT (IABC)
Figure 3. Input Offset Voltage
10 4 PEAK OUTPUT CURRENT ( A) VS = 15V PEAK OUTPUT VOLTAGE AND COMMON-MODE RANGE (V)
+125C
Figure 4. Input Bias Current
5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (IABC) VOUT VCMR 10 5 VOUT LEAKAGE CURRENT (pA) VCMR VS = 15V
RLOAD = Tamb = 25C
Figure 5. Input Bias Current
(+)VIN = (-)VIN = VOUT = 36V 10 4
10 3
+25C
10 2
-55C
10 3 0V 10 2
10
1 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (IABC)
10 -50C -25C
0C 25C 50C 75C100C125C
AMBIENT TEMPERATURE (TA)
Figure 6. Peak Output Current
Figure 7. Peak Output Voltage and Common-Mode Range
10 2 INPUT RESISTANCE (MEG )
Figure 8. Leakage Current
TRANSCONDUCTANCE (gM) -- ( ohm)
10 4
+125C
10 5 gM 10 4 mq m M
INPUT LEAKAGE CURRENT (pA)
PINS 2, 15 OPEN VS = 15V
PINS 2, 15 OPEN 10 1
10 3
10 2
+25C
10 3
-55C +125C
1
10
10 2
+25C
0.1
1 0 1 2 3 4 5 6 INPUT DIFFERENTIAL VOLTAGE 7
10 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (IABC)
0.01 0.1mA
1mA
10mA
100mA
1000mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 9. Input Leakage
Figure 10. Transconductance
Figure 11. Input Resistance
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NE5517, NE5517A, AU5517
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2000 AMPLIFIER BIAS VOLTAGE (mV) 1800 -55C 1600 CAPACITANCE (pF) 1400 1200 1000 800 600 400 1 200 0 0.1mA 1mA 10mA 100mA 1000mA 0 0.01 0.1mA 1mA 10mA 100mA 1000mA 1 10 100 1000 DIFFERENTIAL INPUT VOLTAGE (mVP-P) +125C 5 4
COUT
7 VS = 15V 6
CIN
100 Tamb = +25C OUTPUT DISTORTION (%) 10
RL = 10kW IABC = 1mA
+25C
1
3 2
0.1
AMPLIFIER BIAS CURRENT (IABC)
AMPLIFIER BIAS CURRENT (IABC)
Figure 12. Amplifier Bias Voltage vs. Amplifier Bias Current
20 OUTPUT VOLTAGE RELATIVE TO 1 VOLT RMS (dB) 0 -20 VS = 15V RL = 10kW
VIN = 80mVP-P
Figure 13. Input and Output Capacitance
600 OUTPUT NOISE CURRENT (pA/Hz) 500 400 300 200 100
Figure 14. Distortion vs. Differential Input Voltage
VIN = 40mVP-P
-40 -60 -80 -100 0.1mA 1mA 10mA 100mA 1000mA IABC AMPLIFIER BIAS CURRENT (mA)
OUTPUT NOISE 20kHz BW
IABC = 1mA
IABC = 100mA
0 10
100 1k 10k FREQUENCY (Hz)
100k
Figure 15. Voltage vs. Amplifier Bias Current
Figure 16. Noise vs. Frequency
+36V
+15V
A
4, 13
4V - 11 5, 12 NE5517 1, 15 8, 9 7, 10 A
4, 13
-
11 5, 12 NE5517 1, 10
2, 15
2, 15
3, 14 +
6
3, 14 +
6
-15V
Figure 17. Leakage Current Test Circuit
V+
Figure 18. Differential Input Current Test Circuit
V 50kW V-
Figure 19. Buffer VBE Test Circuit
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NE5517, NE5517A, AU5517
APPLICATIONS
+15V 0.01mF
10kW INPUT 390pF 51W 1.3kW
3, 14 - 2, 15 NE5517 4, 13 + 6 0.01mF 11 1, 16
62kW
7, 10 5, 12 8, 9 OUTPUT
5kW -15V 10kW -15V 0.001mF
Figure 20. Unity Gain Follower
CIRCUIT DESCRIPTION The circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier with linearizing diodes and impedance buffers, is shown in Figure 21.
Transconductance Amplifier
If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor series of In function can be approximated as
KT In I 5 [ KT I 5 * I 4 q q I4 I4 and I 4 ^ I 5 ^ I B KT In I 5 [ KT I 5 * I 4 + 2KT I 5 * I 4 + V IN q q 1 2I B q I4 IB I 5 * I 4 + V IN IB
q
(eq. 3)
The transistor pair, Q4 and Q5, forms a transconductance stage. The ratio of their collector currents (I4 and I5, respectively) is defined by the differential input voltage, VIN, which is shown in Equation 1.
V IN I5 KT + q In I4 (eq. 1)
(eq. 4)
2KT
Where VIN is the difference of the two input voltages KT 26 mV at room temperature (300k). Transistors Q1, Q2 and diode D1 form a current mirror which focuses the sum of current I4 and I5 to be equal to amplifier bias current IB:
I4 ) I5 + IB
V+ 11 D4 Q6 Q10
The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form three current mirrors that produce an output current equal to I5 minus I4. Thus:
V IN I B q 2KT + IO
(eq. 5)
The term
IB
q
2KT
is then the transconductance of the amplifier
(eq. 2)
and is proportional to IB.
D6 Q14 Q12 7,10 Q13 8,9
Q7
Q11
2,15 D2 -INPUT 4,13 1,16 AMP BIAS INPUT Q1 D1 V- 6 Q4 Q5 D3 +INPUT 3,14 V OUTPUT 5,12 Q15 Q2 Q9 R1 Q8 D5 D8 D7 Q16
Q3
Figure 21. Circuit Diagram of NE5517 http://onsemi.com
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NE5517, NE5517A, AU5517
Linearizing Diodes Impedance Buffer
For VIN greater than a few millivolts, Equation 3 becomes invalid and the transconductance increases non-linearly. Figure 22 shows how the internal diodes can linearize the transfer function of the operational amplifier. Assume D2 and D3 are biased with current sources and the input signal current is IS. Since I4 + I5 = IB and I5 - I4 = I0, that is: I4 = (IB - I0), I5 = (IB + I0)
+VS
The upper limit of transconductance is defined by the maximum value of IB (2.0 mA). The lowest value of IB for which the amplifier will function therefore determines the overall dynamic range. At low values of IB, a buffer with very low input bias current is desired. A Darlington amplifier with constant-current source (Q14, Q15, Q16, D7, D8, and R1) suits the need. APPLICATIONS
Voltage-Controlled Amplifier
ID I ID 2 ID S 2 I0 + 2 I )I S I0 + I5 * I4 I4 D3 1/2ID Q4 IS IS 1/2ID IB -VS I5 D2 I5 S I B D
*I
In Figure 23, the voltage divider R2, R3 divides the input-voltage into small values (mV range) so the amplifier operates in a linear manner. It is:
I OUT + *V IN @ R3 @ g M; R2 ) R3
V OUT + I OUT @ R L; A+ V OUT R3 + @ gM @ RL V IN R2 ) R3
(3) gM = 19.2 IABC (gM in mmhos for IABC in mA)
Figure 22. Linearizing Diode
For the diodes and the input transistors that have identical geometries and are subject to similar voltages and temperatures, the following equation is true:
T In q
ID 2 I D 2
Since gM is directly proportional to IABC, the amplification is controlled by the voltage VC in a simple way. When VC is taken relative to -VCC the following formula is valid:
I ABC + (V C * 1.2V) R1
) IS
1 2(I B ) I O) + KT In q 1 2(I B * I O) * IS
(eq. 6)
I I I O + I S 2 B for |I S| t D 2 ID
The 1.2 V is the voltage across two base-emitter baths in the current mirrors. This circuit is the base for many applications of the AU5517/NE5517.
The only limitation is that the signal current should not exceed ID.
VC +VCC R1 R4 = R2/ /R3 3 + 11 NE5517 R2 VIN 4 R3 - 6 IOUT RL RS INT -VCC TYPICAL VALUES: R1 = 47kW R2 = 10kW R3 = 200W R4 = 200W RL = 100kW RS = 47kW 8 VOUT 1 5 7 IABC INT +VCC
Figure 23.
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NE5517, NE5517A, AU5517
Stereo Amplifier With Gain Control Modulators
Figure 24 shows a stereo amplifier with variable gain via a control input. Excellent tracking of typical 0.3 dB is easy to achieve. With the potentiometer, RP, the offset can be adjusted. For AC-coupled amplifiers, the potentiometer may be replaced with two 510 W resistors.
Because the transconductance of an OTA (Operational Transconductance Amplifier) is directly proportional to IABC, the amplification of a signal can be controlled easily. The output current is the product from transconductancexinput voltage. The circuit is effective up to approximately 200 kHz. Modulation of 99% is easy to achieve.
+VCC
10kW VIN1 RIN 1k RP +VCC 15kW
3
+
11
NE5517/A RD - 4 IABC 1 RL 10kW 5.1kW 8
INT +VCC
VOUT1
30kW VC RC 10kW VIN2 RIN 1k RP +VCC 15kW RD - 13 14 15 NE5517/A 12 6 + IABC 16
-VCC 10 9 RL 10kW RS -VCC INT VOUT2 +VCC
Figure 24. Gain-Controlled Stereo Amplifier
RC 30kW VIN2 SIGNAL IABC +VCC 11 3 2 NE5517/A - 10kW 4 RL 10kW 6 -VCC RS -VCC INT + 5 7 1
ID 15kW VOS VIN1 CARRIER 1kW
INT +VCC
8 VOUT
Figure 25. Amplitude Modulator
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NE5517, NE5517A, AU5517
Voltage-Controlled Resistor (VCR) Voltage-Controlled Oscillators
Because an OTA is capable of producing an output current proportional to the input voltage, a voltage variable resistor can be made. Figure 26 shows how this is done. A voltage presented at the RX terminals forces a voltage at the input. This voltage is multiplied by gM and thereby forces a current through the RX terminals:
Rx + R ) RA gM ) RA
Figure 32 shows a voltage-controlled triangle-square wave generator. With the indicated values a range from 2.0 Hz to 200 kHz is possible by varying IABC from 1.0 mA to 10 mA. The output amplitude is determined by IOUT x ROUT. Please notice the differential input voltage is not allowed to be above 5.0 V. With a slight modification of this circuit you can get the sawtooth pulse generator, as shown in Figure 33.
APPLICATION HINTS
where gM is approximately 19.21 mMHOs at room temperature. Figure 27 shows a Voltage Controlled Resistor using linearizing diodes. This improves the noise performance of the resistor.
Voltage-Controlled Filters
Figure 28 shows a Voltage Controlled Low-Pass Filter. The circuit is a unity gain buffer until XC/gM is equal to R/RA. Then, the frequency response rolls off at a 6dB per octave with the -3 dB point being defined by the given equations. Operating in the same manner, a Voltage Controlled High-Pass Filter is shown in Figure 29. Higher order filters can be made using additional amplifiers as shown in Figures 30 and 31.
To hold the transconductance gM within the linear range, IABC should be chosen not greater than 1.0 mA. The current mirror ratio should be as accurate as possible over the entire current range. A current mirror with only two transistors is not recommended. A suitable current mirror can be built with a PNP transistor array which causes excellent matching and thermal coupling among the transistors. The output current range of the DAC normally reaches from 0 to -2.0 mA. In this application, however, the current range is set through RREF (10 kW) to 0 to -1.0 mA.
I DACMAX + 2 @ V REF + 2 @ 5V + 1mA R REF 10kW
+ R ) RA gM @ RA
R +VCC 3 2 NE5517/A 5 - 4 200W 200W -VCC RX C 8 R 100kW 10kW -VCC INT VOUT 7 + 11 IO 30kW VC INT +VCC
X
Figure 26. VCR
+VCC +VCC 3 VOS RP 1kW 6 4 -VCC 2 NE5517/A 11
1
30kW
VC
ID
INT +VCC
5 C
7 8 RX R 100kW 10kW -VCC INT
Figure 27. VCR with Linearizing Diodes
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NE5517, NE5517A, AU5517
1 +VCC 100kW VIN 2 NE5517/A 5 - 4 200W RA 200W -VCC 6 150pF 7 C 3 + 11 30kW VC INT +VCC
IABC
8 VOUT
R 100kW
10kW -VCC INT
NOTE: f O + R A gM g(R ) RA) 2pC
Figure 28. Voltage-Controlled Low-Pass Filter
1 +VCC 100kW 2 NE5517/A -VCC 4 1kW RA 1kW -VCC 5 - 6 0.005mF 7 C +VCC 3 + 11
30kW VC IABC INT +VCC
VOS NULL
8 VOUT R 100kW 10kW -VCC INT
NOTE: f O + R A gM g(R ) RA) 2pC
Figure 29. Voltage-Controlled High-Pass Filter
15kW +VCC +VCC VIN + NE5517/A - C 100pF 200W 200W RA 200 -VCC NOTE: f O + RA gM (R ) R A) 2p C -VCC R 100kW 10kW RA 100 kW + NE5517/A - RA 200W C2 200pF
VC INT +VCC
100kW
VOUT 10kW -VCC INT
Figure 30. Butterworth Filter - 2nd Order
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NE5517, NE5517A, AU5517
1 +VCC 10kW +VCC 3 2 NE5517/A - 6 800pF + 14 11 5 7 20kW 15 NE5517/A - 13 5.1kW 1kW 20kW 5.1kW 800pF + 12 10 LOW PASS VOUT 9 INT +VCC 16 15kW VC
1kW
-VCC
20kW
-VCC BANDPASS OUT -VCC INT
Figure 31. State Variable Filter
30kW VC +VCC 4 - 11 1 NE5517/A 3 + 6 C 0.1mF 20kW 8 5 7 NE5517/A + 14 16 INT +VCC 13 -
+VCC INT +VCC 10
47kW
12
9 10kW
VOUT2
-VCC
-VCC VOUT1
-VCC INT GAIN CONTROL
Figure 32. Triangle-Square Wave Generator (VCO)
IC 470kW VC +VCC 4 + 11 1
IB +VCC INT +VCC 13 - 5 7 NE5517/A C 0.1mF 20kW 8 + 14 R2 30kW -VCC 12 10 16 47kW INT +VCC 30kW
2 3
NE5517/A - 6
R1 30kW
-VCC
NOTE: (V V PK + C R1 ) R2 * 0.8) R 1 T H + 2V PK x C IB T L + 2V PKxC I C I f
-VCC VOUT1 I ttI B OSC 2V xC C PK C
VOUT2 INT
Figure 33. Sawtooth Pulse VCO
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NE5517, NE5517A, AU5517
ORDERING INFORMATION
Device AU5517DR2 AU5517DR2G -40 to +125 C Temperature Range Package SOIC-16 SOIC-16 (Pb-Free) SOIC-16 SOIC-16 (Pb-Free) SOIC-16 SOIC-16 (Pb-Free) 0 to +70 C PDIP-16 PDIP-16 (Pb-Free) PDIP-16 PDIP-16 (Pb-Free) 25 Units/Rail 2500 Tape & Reel 48 Units/Rail 2500 Tape & Reel Shipping
NE5517D NE5517DG
NE5517DR2 NE5517DR2G
NE5517N NE5517NG
NE5517AN NE5517ANG
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NE5517, NE5517A, AU5517
PACKAGE DIMENSIONS
SOIC-16 CASE 751B-05 ISSUE J
-A-
16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019
-B-
1 8
P
8 PL
0.25 (0.010)
M
B
S
G F
K C -T-
SEATING PLANE
R
X 45 _
M D
16 PL M
J
0.25 (0.010)
TB
S
A
S
PDIP-16 CASE 648-08 ISSUE T
-A-
16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL.
B
1 8
F S
C
L
-T- H G D
16 PL
SEATING PLANE
K
J TA
M
M
0.25 (0.010)
M
DIM A B C D F G H J K L M S
INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040
MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01
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NE5517/D

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