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| MJD41C (NPN) MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features * Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("1" Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Monolithic Construction With Built-in Base - Emitter Resistors Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS, 20 WATTS MARKING DIAGRAMS 4 12 3 DPAK CASE 369C STYLE 1 4 YWW J4xCG 1 2 3 DPAK-3 CASE 369D STYLE 1 Y = Year WW = Work Week J4xC = Device Code x = 1 or 2 G = Pb-Free Package YWW J4xCG MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak Symbol VCEO VCB VEB IC IB PD PD 1.75 0.014 TJ, Tstg -65 to +150 Max 100 100 5 6 10 2 20 0.16 Unit Vdc Vdc Vdc Adc Adc W W/C W W/C C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 6.25 71.4 Unit C/W C/W Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 6 Publication Order Number: MJD41C/D MJD41C (NPN) MJD42C (PNP) III I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I III I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) VCEO(sus) ICEO ICES 100 - Vdc - 50 mAdc mAdc Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) - 10 IEBO - 0.5 mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) hFE - 30 15 - - 75 Collector-Emitter Saturation Voltage (IC = 6 Adc, IB = 600 mAdc) Base-Emitter On Voltage (IC = 6 Adc, VCE = 4 Vdc) VCE(sat) 1.5 Vdc VBE(on) - 2 Vdc DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 3) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) fT 3 - MHz hfe 20 - - 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. fT = hfe* ftest. ORDERING INFORMATION Device MJD41CRL MJD41CRLG MJD41CT4 MJD41CT4G MJD42C MJD42CG MJD42C1 MJD42C1G MJD42CRL MJD42CRLG MJD42CT4 MJD42CT4G Package Type DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) 369C 2500 / Tape & Reel 1800 / Tape & Reel 369D 75 Units / Rail 369C 2500 / Tape & Reel 1800 / Tape & Reel Package Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MJD41C (NPN) MJD42C (PNP) TYPICAL CHARACTERISTICS TA 2.5 PD, POWER DISSIPATION (WATTS) TC 25 VCC +30 V RC RB D1 -4 V SCOPE 2 20 +11 V 0 -9 V 25 ms 1.5 15 TC TA SURFACE MOUNT 51 1 10 tr, tf 10 ns DUTY CYCLE = 1% 0.5 0 5 0 25 50 75 100 125 150 T, TEMPERATURE (C) RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: MSB5300 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating Figure 2. Switching Time Test Circuit 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7 5 0.06 VCE = 2 V TJ = 150C t, TIME ( s) 25C 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.06 0.1 tr TJ = 25C VCC = 30 V IC/IB = 10 -55 C td @ VBE(off) 5 V 0.1 0.2 0.3 0.4 0.6 1 2 4 6 0.2 0.4 0.6 1 2 4 6 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) 5 3 2 Figure 4. Turn-On Time ts 1.2 t, TIME ( s) 1 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.06 0.1 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 0.8 VCE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VBE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 0.6 1 2 3 4 6 0 0.06 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1 2 IC, COLLECTOR CURRENT (AMP) 4 6 Figure 5. "On" Voltages Figure 6. Turn-Off Time http://onsemi.com 3 MJD41C (NPN) MJD42C (PNP) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 TJ = 25C 1.6 IC = 1 A 1.2 2.5 A 5A C, CAPACITANCE (pF) 200 Cib 100 70 50 Cob 300 TJ = 25C 0.8 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 30 0.5 1 3 10 2 5 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 7. Collector Saturation Region Figure 8. Capacitance r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 9. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5 3 2 1 0.5 0.3 0.1 500 ms dc 5 ms WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO TC = 25C SINGLE PULSE TJ = 150C 1 100 ms 1 ms 0.05 0.03 0.01 MJD41C, 42C 2 3 5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 10. Maximum Forward Bias Safe Operating Area http://onsemi.com 4 MJD41C (NPN) MJD42C (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MJD41C (NPN) MJD42C (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJD41C/D |
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