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| DGS 20-022A DGS 20-025A DGSK 40-022A DGSK 40-025A Gallium Arsenide Schottky Rectifier Preliminary Data VRSM V 220 250 VRSM V 220 250 VRRM V 220 250 VRRM V 220 250 DGSK 40-022A DGSK 40-025A Common cathode IFAV = 18 A VRRM = 220/250 V CJunction = 26 pF Type DGS 20-022A DGS 20-025A Type A C Single TO-220 AC C A C (TAB) A = Anode, C = Cathode , TAB = Cathode A C A TO-220 AB A C A C (TAB) Symbol IFAV IFAV IFSM TVJ Tstg Ptot Md Conditions TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine Maximum Ratings 18 13 30 -55...+175 -55...+150 A A A C C W Nm TC = 25C mounting torque 48 0.4...0.6 Features Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 q q q q q q q Applications MHz Switched mode power supplies q (SMPs) q q q Small size SMPs High frequency converters Resonant converters Symbol IR VF CJ RthJC RthCH Weight Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 7.5 A; IF = 7.5 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 2.0 2.0 1.3 1.2 26 3.1 0.5 2 1.5 mA mA V V pF K/W K/W g VR = 100 V; TVJ = 125C Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 119 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2001 IXYS All rights reserved 1-2 DGS 20-022A DGS 20-025A 30 10 A IF 1 CJ 100 300 pF DGSK 40-022A DGSK 40-025A 0.1 TVJ = 125C 25C TVJ = 125C 0.01 0.0 0.5 1.0 1.5 VF 2.0 V 2.5 10 0.1 1 10 100 V 1000 VR Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 K/W Single Pulse Outline (center pin only for DGSK types) 1 ZthJC 0.1 0.01 DGS10-015/018BS 0.00001 0.0001 0.001 0.01 0.1 1 t s 10 Dim. A B C D E F G H J K M N Q R Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: Rectifier Diode conduction by majority + minority carriers forward characteristics VF (IF) turn off characteristics extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) turn on characteristics delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.38 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.015 0.022 0.090 0.110 (c) 2001 IXYS All rights reserved 2-2 119 |
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