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| GaAs MMIC Data Sheet * * * * * 3-stage power amplifier for 3.5 GHz applications Linear Output power 31.0 dBm Gain of 21.0 dB typ. Operating voltage 7.0 V typ. Unconditionally stable CGY 353 MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CGY 353 Marking CGY 353 Ordering Code (taped) Q62702-G82 Package MW-16 Maximum Ratings Parameter Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (TS 81 C) TS: Temperature at soldering point Pulse peak power dissipation duty cycle 30%, tON = 0.5 ms Thermal Resistance Parameter Channel-soldering point Symbol Value t.b.d. Unit K/W Symbol Value 8.0 2.0 17.0 150 - 55 ... + 150 7.0 11.0 Unit V A dBm VD ID PIN_max TCh Tstg Ptot PPulse C C W W RthChS Data Sheet 1 2001-01-01 GaAs Components CGY 353 VG1 VD1 VG2 VD2 VG3 RF IN RF OUT / VD3 GND GND EHT08779 Figure 1 Functional Block Diagram Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Name RF IN GND GND GND GND GND Configuration RF input1) GND GND GND GND GND 1st RF Amp Drain Bias 2nd RF Amp Gate Bias 1st RF Amp Gate Bias GND GND Bias Voltage - 0V 0V 0V 0V 0V pos. voltage2) neg. voltage3) neg. voltage3) 0V 0V pos. voltage2) pos. voltage2) pos. voltage2) neg. voltage3) VD1 VG2 VG1 GND GND RF OUT/VD3 RF output/3rd RF Amp Drain Bias RF OUT/VD3 RF output/3rd RF Amp Drain Bias RF OUT/VD3 RF output/3rd RF Amp Drain Bias VG3 3rd RF Amp Gate Bias Data Sheet 2 2001-01-01 GaAs Components CGY 353 Pin Configuration (cont'd) Pin No. 16 MW-16 Heatsink Slug 1) 2) 3) Name Configuration 2nd RF Amp Drain Bias OWP Ground Bias Voltage pos. voltage2) 0V VD2 GND The gate voltage of the 1st RF Amp is not blocked internally (see also Figure 1). Therefore VG1 must be blocked externally at RF IN. The positive DC voltages of VD1, VD2 and VD3 are typically equal. The voltage range is typically between + 5.0 V and + 7.0 V. The negative DC voltages of VG1, VG2 and VG3 are typically equal. The voltage range depends on the wanted drain current. A gate voltage of - 2.1 V will set ID typically to 1.2 A at VD = 7.0 V. In that case ID1 will have about 70 mA, ID2 about 270 mA and ID3 about 900 mA. Data Sheet 3 2001-01-01 GaAs Components CGY 353 Electrical Characteristics Conditions: VD = 7.0 V, TA = 25 C, f = 3425 - 3450 MHz, ZS = ZL = 50 , pulsed operation mode, duty cycle = 30%, unless otherwise specified. Parameters Symbol min. Supply current Power down current Supply current neg. voltage Gain at nominal linear output power Limit Values typ. 1.2 10 1 21 31 33 15 - - - 5 max. - - - - - - - - 30 - - - A mA mA dB dBm dBm % dBc dB dB dB Unit Test Conditions - - - - IDD IPdown IG G - - - - - - - - 10 8 - Linear Output Power POUT Saturation Output Power PIN = 12 dBm PIN = 14 dBm PIN = 10 dBm 156 kHz beside carrier PSAT Overall Power added PAE Efficiency Adjacent channel power1) Input return loss2) Output return loss Noise Figure 1) ACP S11 S22 PIN = 10 dBm PIN = 10 dBm - NF 2) Modulation: /4 DQPSK with an alpha = 0.4 root raised cosine filtered Symbol rate: 256 ksymbols/s. Transmission burst: Each burst has a 500 s nominal duration with 20 dB of raised cosine shaping of 8 s duration at the beginning and the end of the burst. A maximum of three bursts occur in each 5 ms period, but consecutive bursts are separated by a minimum interval of 1 ms. Duty cycle: 30%, 3 bursts per 5 ms frame with a minimum interval of 1 ms between bursts. The modulation signal has a peak to mean envelope ratio of 3.1 dB. Values of S11 and S22 with match as realized on application board. Data Sheet 4 2001-01-01 GaAs Components CGY 353 X6 X7 C6 SMA Input X1 100 nF C 15 100 nF C 18 10 pF 8 nH C3 1 pF IC1 1 2 3 4 5 6 7 8 C7 10 pF L1 C 16 100 nF C 19 10 pF C1 2.7 pF C2 100 nF X5 X6 C5 10 pF 16 RF IN VG1 15 GND GND 14 GND GND 13 GND RF OUT/VD3 12 GND RF OUT/VD3 11 GND RF OUT/VD3 10 VD1 VG3 9 VG2 VD2 GND Backside MW16 CGY 353 17 C 10 0.5 pF Lambda/4 70 L2 C 14 0.5 pF C 20 1 pF SMA Output X2 C 11 2.7 pF X4 C 13 10 pF C 17 100 nF X3 EHT09231 Figure 2 Notes: Application Circuit Input and output line: 50 C10 and C14: 0402 capacitors All other capacitors: 0603 C20: AVX 06035J1R0BBT L1: Coilcraft Air Core Inductor A03T Suggested Heat Sink: about 7 K/W VD3 additionally blocked with 4.7 F/16 V at connection X7 Data Sheet 5 2001-01-01 GaAs Components CGY 353 Package Outlines MW-16 (Special Package) 1.6 max 7 7 x 0.8 = 5.6 D 0.1 max 1.4 0.1 H 0.2 M A-B D C B 0.350.05 9 7 4x 0.2 A-B D H 16x 0.2 D +0.05 0.15 -0.06 A Exposed solderable heatsink o4.57 0.05 0.8 0...7 C 16x 0.1 C Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Sheet 6 Dimensions in mm 2001-01-01 GPW05969 |
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