|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. * Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain --10 dB Drain Efficiency -- 25% ACPR @ 5 MHz Offset -- - 43 dBc in 3.84 MHz Channel Bandwidth * 10 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRFG35010AR1 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT CASE 360D - 02, STYLE 1 NI - 360HF Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch TC Value 15 -5 33 - 65 to +175 175 - 40 to +90 Unit Vdc Vdc dBm C C C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 10 W CW Case Temperature 79C, 1 W CW Class AB Class A Symbol RJC Value (1, 2) 4.0 4.1 Unit C/W 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRFG35010AR1 1 RF Device Data Freescale Semiconductor Table 3. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 2.2 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.2 Typ 2.9 <1 0.09 5 - 0.8 - 0.8 Max -- 100 1 15 - 0.7 - 0.7 Unit Adc Adc mAdc mAdc Vdc Vdc Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 140 mA, Pout = 1 W Avg., f = 3550 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 9 23 -- 10 25 - 43 -- -- - 40 -- dB % dBc W Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 140 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB -- 10 1. Measurements made with device in test fixture. MRFG35010AR1 2 RF Device Data Freescale Semiconductor VBIAS C13 C8 C7 C6 C5 C4 R2 VSUPPLY C14 C12 C11 C10 C9 C3 C15 C2 R1 Z9 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z8 Z7 Z12 C16 Z10 Z11 Z13 Z14 Z15 Z16 C17 Z17 RF OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z11 0.044 0.044 0.615 0.044 0.270 0.044 0.434 0.015 x 0.250 Microstrip x 0.030 Microstrip x 0.050 Microstrip x 0.070 Microstrip x 0.490 Microstrip x 0.470 Microstrip x 0.110 Microstrip x 0.527 Microstrip Z9, Z10 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.290 x 90 Microstrip Radial Stub 0.184 x 0.390 Microstrip 0.040 x 0.580 Microstrip 0.109 x 0.099 Microstrip 0.030 x 0.225 Microstrip 0.080 x 0.240 Microstrip 0.044 x 0.143 Microstrip Rogers 4350, 0.020, r = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 4. 3.5 GHz Test Circuit Component Designations and Values Part C1, C17 C2, C16 C3, C15 C4, C13, C14 C5, C12 C6, C11 C7, C10 C8, C9 R1, R2 Description 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 39K Chip Capacitors 10 F, 50 V Chip Capacitors 50 Chip Resistors Part Number 100A6R81BW150XT 100A100JW150XT 100A101JW150XT 100B101JW500XT 100B102JW500XT 200B104KW50XT 200B393KW50XT GRM55DR61H106KA88B P51ETR - ND Manufacturer ATC ATC ATC ATC ATC ATC ATC Murata Newark MRFG35010AR1 RF Device Data Freescale Semiconductor 3 C8 C9 R2 C7 C6 C5 C4 C3 C2 C16 R1 C13 C12 C11 C10 C14 C15 C1 C17 MRFG35010, Rev. 8 Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010AR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 14 GT, TRANSDUCER GAIN (dB) 12 10 8 6 4 2 10 15 20 25 30 35 Pout, OUTPUT POWER (dBm) VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth S = 0.850 -138.7_ L = 0.827 -157.6_ GT 60 50 40 30 20 10 0 40 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) D Figure 3. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -10 VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.850 -138.7_, L = 0.827 -157.6_ 0 -20 -5 -30 IRL -10 -40 -15 -50 ACPR -60 15 20 25 30 35 Pout, OUTPUT POWER (dBm) -20 -25 40 Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35010AR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 14 12 Gps, POWER GAIN (dB) 10 8 6 D 4 2 20 24 28 32 36 Pout, OUTPUT POWER (dBm) 10 0 40 VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 60 50 40 Gps 30 20 Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -20 VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IRL -40 -20 -10 IRL, INPUT RETURN LOSS (dB) -30 -15 -50 ACPR -60 20 24 28 32 36 Pout, OUTPUT POWER (dBm) -25 -30 40 Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data is generated from the test circuit shown. MRFG35010AR1 6 RF Device Data Freescale Semiconductor D, DRAIN EFFICIENCY (%) Zo = 25 Zload f = 3550 MHz Zsource f = 3550 MHz VDD = 12 Vdc, IDQ = 140 mA, Pout = 1 W Avg. f MHz 3550 Zsource W 4.6 - j18.7 Zload W 4.9 - j9.8 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 7. Series Equivalent Source and Load Impedance MRFG35010AR1 RF Device Data Freescale Semiconductor 7 Table 5. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25C, 50 ohm system) f GHz 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 S11 |S11| 0.959 0.959 0.956 0.959 0.959 0.959 0.959 0.959 0.958 0.958 0.958 0.958 0.958 0.957 0.957 0.957 0.958 0.956 0.956 0.956 0.955 0.955 0.955 0.954 0.954 0.953 0.953 0.952 0.953 0.952 0.951 0.952 0.948 0.947 0.947 0.945 0.945 0.945 0.944 0.943 0.942 0.941 0.939 0.939 0.937 - 171.4 - 173.7 - 175.6 - 177.2 - 178.5 - 179.6 179.3 178.4 177.5 176.7 175.8 175.1 174.3 173.5 172.9 172.2 171.5 170.9 170.1 169.5 168.8 168.1 167.5 166.8 166.2 165.5 164.8 164.1 163.2 162.6 161.8 161.0 161.6 160.9 160.3 159.5 158.9 158.1 157.5 156.8 156.0 155.2 154.6 153.8 153.0 |S21| 9.867 8.220 7.055 6.192 5.509 4.969 4.525 4.157 3.844 3.578 3.347 3.147 2.971 2.814 2.675 2.551 2.439 2.336 2.244 2.159 2.083 2.013 1.948 1.888 1.832 1.779 1.730 1.683 1.641 1.598 1.559 1.517 1.549 1.521 1.494 1.470 1.447 1.426 1.407 1.389 1.371 1.355 1.341 1.328 1.316 S21 89.9 87.6 85.6 83.8 82.2 80.6 79.0 77.6 76.2 74.8 73.4 72.0 70.7 69.4 68.1 66.8 65.4 64.2 62.8 61.6 60.3 59.0 57.7 56.5 55.2 53.9 52.6 51.3 50.1 48.9 47.6 46.4 44.6 43.3 42.0 40.7 39.4 38.0 36.7 35.4 34.0 32.7 31.3 29.9 28.6 |S12| 0.0083 0.0086 0.0083 0.0088 0.0089 0.0089 0.0091 0.0094 0.0095 0.0098 0.0099 0.0103 0.0107 0.0108 0.0111 0.0114 0.0117 0.0119 0.0124 0.0126 0.0129 0.0133 0.0136 0.0139 0.0143 0.0147 0.0151 0.0154 0.0158 0.0161 0.0164 0.0167 0.0178 0.0183 0.0189 0.0194 0.0198 0.0204 0.0209 0.0215 0.0220 0.0226 0.0234 0.0238 0.0245 S12 16.6 18.3 19.5 20.0 22.4 22.7 23.9 26.0 26.9 28.0 29.2 30.6 31.6 32.0 33.0 33.8 34.1 34.7 35.5 35.3 35.9 36.1 36.7 36.9 37.4 37.8 37.4 38.1 37.7 37.8 37.9 37.9 37.5 37.3 37.2 37.2 36.9 36.4 36.4 36.0 35.9 35.5 34.9 34.2 34.3 |S22| 0.784 0.784 0.784 0.783 0.782 0.781 0.781 0.780 0.779 0.779 0.778 0.777 0.776 0.776 0.775 0.774 0.774 0.773 0.773 0.772 0.772 0.772 0.771 0.771 0.770 0.770 0.769 0.769 0.769 0.769 0.769 0.769 0.760 0.759 0.757 0.756 0.754 0.754 0.752 0.751 0.749 0.749 0.745 0.744 0.742 S22 - 178.9 - 179.6 179.7 179.2 178.7 178.2 177.8 177.4 177.0 176.7 176.3 176.0 175.6 175.3 174.9 174.6 174.3 173.9 173.6 173.2 173.0 172.6 172.3 171.9 171.7 171.4 171.1 170.9 170.6 170.5 170.3 170.3 167.3 166.8 166.4 165.9 165.6 165.1 164.7 164.2 163.8 163.2 162.9 162.5 162.1 MRFG35010AR1 8 RF Device Data Freescale Semiconductor Table 5. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 S11 |S11| 0.936 0.935 0.933 0.933 0.930 0.929 0.926 0.925 0.924 0.921 0.919 0.916 0.915 0.912 0.908 0.905 0.903 0.899 0.896 0.893 0.890 0.885 0.881 0.876 0.872 0.871 0.862 0.856 0.850 0.845 0.838 0.831 0.822 0.816 0.808 0.801 0.792 0.783 0.775 0.765 0.754 0.743 0.731 0.718 152.2 151.4 150.5 149.8 149.0 148.1 147.2 146.3 145.3 144.4 143.5 142.5 141.4 140.5 139.4 138.3 137.1 136.0 134.8 133.6 132.3 131.0 129.6 128.1 126.7 125.1 123.7 122.0 120.3 118.6 116.7 114.8 112.9 110.8 108.6 106.4 104.1 101.6 99.0 96.2 93.3 90.2 87.0 83.8 |S21| 1.305 1.296 1.287 1.279 1.272 1.266 1.261 1.257 1.254 1.251 1.249 1.249 1.247 1.249 1.250 1.252 1.256 1.260 1.265 1.271 1.278 1.284 1.292 1.301 1.311 1.322 1.333 1.346 1.360 1.375 1.389 1.405 1.422 1.441 1.460 1.480 1.500 1.523 1.545 1.567 1.590 1.611 1.634 1.659 S21 27.2 25.8 24.4 23.0 21.6 20.1 18.7 17.2 15.7 14.2 12.7 11.2 9.7 8.1 6.5 4.9 3.3 1.6 - 0.1 - 1.8 - 3.5 - 5.3 - 7.1 - 9.0 - 10.8 - 12.7 - 14.7 - 16.6 - 18.6 - 20.7 - 22.9 - 25.0 - 27.3 - 29.6 - 31.9 - 34.4 - 36.9 - 39.4 - 42.1 - 44.8 - 47.7 - 50.5 - 53.5 - 56.5 |S12| 0.0250 0.0258 0.0264 0.0273 0.0280 0.0288 0.0297 0.0306 0.0314 0.0324 0.0333 0.0343 0.0355 0.0366 0.0377 0.0390 0.0400 0.0413 0.0422 0.0434 0.0450 0.0464 0.0478 0.0494 0.0510 0.0530 0.0543 0.0563 0.0583 0.0605 0.0624 0.0646 0.0671 0.0696 0.0721 0.0747 0.0774 0.0804 0.0832 0.0861 0.0894 0.0924 0.0955 0.0989 S12 33.8 33.4 32.7 32.1 31.7 31.5 30.6 29.9 29.2 28.6 27.8 27.1 26.3 25.3 24.7 23.4 22.2 20.8 20.0 19.5 18.4 17.3 16.3 15.1 14.1 13.0 11.3 10.3 9.1 7.4 6.2 4.6 3.0 1.3 - 0.4 - 2.2 - 4.0 - 6.1 - 8.1 - 10.3 - 12.4 - 14.8 - 17.0 - 19.5 |S22| 0.740 0.738 0.737 0.736 0.733 0.730 0.728 0.725 0.722 0.720 0.717 0.715 0.710 0.708 0.705 0.701 0.698 0.694 0.690 0.686 0.682 0.678 0.673 0.668 0.664 0.661 0.652 0.648 0.642 0.636 0.631 0.624 0.617 0.612 0.605 0.599 0.591 0.582 0.576 0.569 0.561 0.555 0.547 0.541 S22 161.6 161.1 160.7 160.1 159.7 159.2 158.7 158.2 157.7 157.2 156.7 156.0 155.7 155.0 154.5 153.9 153.4 152.8 152.2 151.6 151.0 150.4 149.8 149.2 148.6 147.8 147.3 146.7 146.0 145.5 144.8 144.1 143.5 142.7 142.1 141.5 140.7 140.1 139.5 138.8 138.1 137.5 136.8 136.1 MRFG35010AR1 RF Device Data Freescale Semiconductor 9 Table 5. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25C, 50 ohm system) (continued) f GHz 4.70 4.75 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25 5.30 5.35 5.40 5.45 5.50 5.55 5.60 5.65 5.70 5.75 5.80 5.85 5.90 5.95 6.00 6.05 6.10 6.15 6.20 6.25 6.30 6.35 6.40 6.45 6.50 6.55 6.60 6.65 6.70 6.75 6.80 6.85 S11 |S11| 0.706 0.693 0.680 0.667 0.655 0.642 0.630 0.618 0.608 0.598 0.591 0.583 0.579 0.576 0.576 0.576 0.580 0.585 0.592 0.601 0.613 0.627 0.646 0.667 0.688 0.708 0.730 0.751 0.772 0.793 0.812 0.831 0.850 0.866 0.881 0.896 0.908 0.920 0.930 0.938 0.946 0.953 0.959 0.967 80.3 76.6 72.8 68.8 64.6 60.1 55.5 50.6 45.5 40.2 34.5 28.8 22.7 16.5 10.1 3.5 - 3.2 - 9.7 - 16.2 - 22.7 - 28.8 - 34.6 - 40.5 - 46.4 - 52.2 - 57.7 - 63.0 - 68.2 - 73.1 - 77.7 - 82.3 - 86.6 - 90.8 - 94.8 - 98.7 - 102.3 - 105.9 - 109.2 - 112.4 - 115.4 - 118.3 - 121.0 - 123.7 - 126.4 |S21| 1.683 1.706 1.729 1.752 1.775 1.797 1.819 1.839 1.859 1.878 1.896 1.910 1.924 1.937 1.947 1.952 1.957 1.953 1.943 1.929 1.913 1.900 1.885 1.864 1.834 1.800 1.760 1.716 1.668 1.617 1.561 1.504 1.445 1.385 1.323 1.261 1.199 1.138 1.077 1.018 0.961 0.906 0.853 0.802 S21 - 59.6 - 62.7 - 66.0 - 69.4 - 72.8 - 76.3 - 79.9 - 83.6 - 87.4 - 91.2 - 95.2 - 99.3 - 103.4 - 107.7 - 112.0 - 116.5 - 121.2 - 125.8 - 130.5 - 135.3 - 139.9 - 144.6 - 149.5 - 154.6 - 159.8 - 164.9 - 170.1 - 175.2 179.7 174.6 169.6 164.6 159.6 154.7 150.0 145.3 140.7 136.3 132.0 127.8 123.8 119.8 116.0 112.2 |S12| 0.1025 0.1061 0.1097 0.1136 0.1175 0.1214 0.1254 0.1294 0.1335 0.1377 0.1412 0.1451 0.1488 0.1526 0.1561 0.1594 0.1627 0.1651 0.1675 0.1691 0.1707 0.1724 0.1739 0.1749 0.1753 0.1750 0.1740 0.1728 0.1709 0.1685 0.1654 0.1620 0.1584 0.1542 0.1498 0.1447 0.1399 0.1351 0.1303 0.1254 0.1202 0.1153 0.1103 0.1056 S12 - 21.9 - 24.5 - 27.2 - 30.0 - 32.8 - 35.8 - 39.0 - 42.2 - 45.5 - 49.1 - 52.7 - 56.2 - 60.1 - 63.9 - 67.9 - 72.0 - 76.3 - 80.6 - 85.0 - 89.5 - 93.8 - 98.2 - 102.8 - 107.5 - 112.4 - 117.3 - 122.2 - 127.1 - 132.1 - 136.9 - 141.9 - 146.8 - 151.5 - 156.4 - 161.0 - 165.4 - 169.7 - 173.9 - 178.1 177.8 173.9 170.0 166.4 162.8 |S22| 0.534 0.526 0.519 0.512 0.504 0.496 0.489 0.481 0.474 0.467 0.459 0.450 0.441 0.431 0.421 0.410 0.397 0.383 0.368 0.350 0.331 0.312 0.292 0.272 0.251 0.232 0.215 0.204 0.200 0.204 0.218 0.240 0.268 0.299 0.335 0.371 0.407 0.444 0.479 0.513 0.547 0.579 0.608 0.637 S22 135.4 134.6 133.9 133.0 132.1 131.3 130.3 129.2 128.1 126.7 125.1 123.6 121.7 119.6 117.2 114.6 111.4 108.1 104.2 99.8 95.1 89.6 83.2 75.6 66.6 56.0 43.8 29.6 14.1 - 1.8 - 16.7 - 30.5 - 42.5 - 52.6 - 61.5 - 69.3 - 76.1 - 82.4 - 88.0 - 93.1 - 97.9 - 102.3 - 106.4 - 110.2 MRFG35010AR1 10 RF Device Data Freescale Semiconductor Table 5. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25C, 50 ohm system) (continued) f GHz 6.90 6.95 7.00 7.05 7.10 7.15 7.20 7.25 7.30 7.35 7.40 7.45 7.50 7.55 7.60 7.65 7.70 7.75 7.80 7.85 7.90 7.95 8.00 S11 |S11| 0.969 0.971 0.972 0.973 0.974 0.974 0.975 0.976 0.976 0.977 0.978 0.977 0.975 0.975 0.975 0.974 0.976 0.979 0.983 0.986 0.986 0.984 0.983 - 128.8 - 131.2 - 133.4 - 135.4 - 137.3 - 139.2 - 140.9 - 142.6 - 144.3 - 145.8 - 147.3 - 148.8 - 150.0 - 151.4 - 152.6 - 153.7 - 154.7 - 155.7 - 156.8 - 158.0 - 159.1 - 160.2 - 161.2 |S21| 0.752 0.704 0.660 0.620 0.582 0.547 0.513 0.482 0.453 0.426 0.400 0.376 0.354 0.332 0.313 0.295 0.278 0.263 0.249 0.235 0.222 0.210 0.199 S21 108.7 105.4 102.3 99.4 96.5 93.7 91.0 88.4 85.9 83.5 81.1 78.9 76.8 74.8 72.9 71.1 69.4 67.7 66.0 64.3 62.7 61.0 59.4 |S12| 0.1006 0.0959 0.0915 0.0874 0.0834 0.0795 0.0760 0.0726 0.0694 0.0665 0.0633 0.0605 0.0577 0.0553 0.0531 0.0511 0.0492 0.0475 0.0459 0.0438 0.0421 0.0404 0.0387 S12 159.3 156.2 153.2 150.3 147.6 145.0 142.4 140.0 137.7 135.2 133.0 131.0 129.4 127.8 125.9 124.2 123.0 121.1 119.0 117.2 115.6 113.5 111.8 |S22| 0.662 0.686 0.709 0.729 0.749 0.769 0.786 0.802 0.817 0.830 0.843 0.856 0.866 0.878 0.888 0.897 0.906 0.913 0.918 0.925 0.931 0.937 0.944 S22 - 113.9 - 117.2 - 120.4 - 123.3 - 126.0 - 128.7 - 131.3 - 133.7 - 136.0 - 138.2 - 140.2 - 142.2 - 144.1 - 146.0 - 147.8 - 149.6 - 151.2 - 152.8 - 154.4 - 155.8 - 157.1 - 158.4 - 159.7 MRFG35010AR1 RF Device Data Freescale Semiconductor 11 Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25C, 50 ohm system) f GHz 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 S11 |S11| 0.937 0.936 0.934 0.937 0.937 0.936 0.937 0.936 0.936 0.936 0.936 0.936 0.936 0.935 0.936 0.935 0.936 0.934 0.934 0.934 0.934 0.934 0.933 0.933 0.933 0.932 0.932 0.932 0.932 0.931 0.931 0.931 0.927 0.926 0.926 0.925 0.925 0.924 0.923 0.923 0.922 0.921 0.919 0.919 0.917 - 166.5 - 169.5 - 171.9 - 173.9 - 175.5 - 176.9 - 178.2 - 179.2 179.7 178.8 177.9 177.0 176.2 175.4 174.7 173.9 173.2 172.6 171.8 171.1 170.4 169.7 169.1 168.4 167.7 167.1 166.4 165.7 164.8 164.1 163.4 162.6 163.2 162.6 162.0 161.2 160.6 159.9 159.3 158.6 157.9 157.1 156.5 155.7 154.9 |S21| 8.882 7.414 6.373 5.598 4.983 4.497 4.098 3.765 3.481 3.241 3.031 2.849 2.690 2.548 2.420 2.307 2.206 2.111 2.028 1.949 1.879 1.814 1.755 1.700 1.647 1.598 1.554 1.510 1.472 1.432 1.395 1.357 1.383 1.357 1.332 1.309 1.287 1.267 1.250 1.232 1.215 1.200 1.186 1.173 1.162 S21 91.6 89.0 86.6 84.7 82.8 81.0 79.3 77.7 76.1 74.6 73.1 71.6 70.2 68.7 67.3 65.9 64.5 63.1 61.7 60.3 59.0 57.6 56.2 54.9 53.5 52.2 50.8 49.5 48.1 46.8 45.5 44.3 42.5 41.2 39.8 38.4 37.1 35.7 34.4 33.0 31.6 30.2 28.9 27.5 26.1 |S12| 0.0167 0.0166 0.0168 0.0170 0.0170 0.0169 0.0172 0.0171 0.0172 0.0174 0.0173 0.0174 0.0176 0.0177 0.0177 0.0179 0.0181 0.0181 0.0183 0.0184 0.0186 0.0187 0.0188 0.0189 0.0192 0.0194 0.0195 0.0196 0.0198 0.0199 0.0201 0.0202 0.0212 0.0215 0.0216 0.0221 0.0224 0.0226 0.0230 0.0234 0.0236 0.0241 0.0246 0.0249 0.0254 S12 9.9 8.8 8.1 7.7 7.7 7.6 7.7 8.0 7.7 8.0 7.9 8.0 8.6 8.7 8.9 9.1 9.1 9.1 9.4 9.1 9.4 9.6 9.7 9.8 10.0 10.2 10.0 10.2 10.2 10.2 10.3 10.4 10.0 10.0 10.2 10.2 10.0 10.0 10.0 9.8 9.9 9.6 9.3 9.1 9.3 |S22| 0.755 0.757 0.760 0.760 0.760 0.761 0.761 0.761 0.761 0.762 0.762 0.761 0.761 0.762 0.761 0.761 0.761 0.761 0.761 0.761 0.762 0.761 0.762 0.762 0.762 0.761 0.761 0.761 0.762 0.762 0.763 0.763 0.755 0.754 0.753 0.752 0.752 0.751 0.751 0.750 0.749 0.749 0.746 0.746 0.744 S22 - 175.6 - 176.8 - 177.8 - 178.5 - 179.2 - 179.8 179.7 179.2 178.7 178.3 177.9 177.5 177.2 176.9 176.5 176.1 175.8 175.5 175.1 174.8 174.5 174.1 173.8 173.5 173.2 172.9 172.7 172.5 172.2 172.1 171.9 171.9 169.0 168.5 168.1 167.7 167.3 166.9 166.5 166.0 165.6 165.0 164.7 164.3 163.9 MRFG35010AR1 12 RF Device Data Freescale Semiconductor Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 S11 |S11| 0.917 0.916 0.914 0.914 0.911 0.910 0.908 0.907 0.906 0.903 0.901 0.899 0.898 0.895 0.892 0.889 0.887 0.884 0.881 0.879 0.876 0.872 0.868 0.864 0.860 0.860 0.852 0.846 0.841 0.837 0.830 0.825 0.817 0.812 0.805 0.799 0.791 0.783 0.777 0.769 0.759 0.749 0.738 0.727 154.2 153.5 152.6 151.9 151.1 150.3 149.5 148.6 147.7 146.8 145.9 145.0 143.9 143.1 142.0 141.0 139.9 138.9 137.8 136.6 135.4 134.1 132.8 131.5 130.1 128.6 127.3 125.7 124.2 122.6 120.8 119.0 117.3 115.3 113.3 111.3 109.0 106.7 104.3 101.7 98.9 96.0 93.1 90.1 |S21| 1.151 1.141 1.132 1.124 1.116 1.111 1.104 1.100 1.096 1.092 1.089 1.088 1.085 1.086 1.086 1.087 1.089 1.092 1.095 1.099 1.104 1.109 1.115 1.121 1.129 1.138 1.147 1.157 1.168 1.181 1.192 1.206 1.220 1.236 1.252 1.270 1.288 1.308 1.328 1.347 1.370 1.390 1.412 1.436 S21 24.7 23.3 21.9 20.4 19.0 17.6 16.1 14.7 13.2 11.7 10.2 8.7 7.2 5.6 4.1 2.5 0.9 - 0.7 - 2.4 - 4.0 - 5.7 - 7.4 - 9.2 - 11.0 - 12.7 - 14.6 - 16.5 - 18.4 - 20.3 - 22.3 - 24.3 - 26.4 - 28.5 - 30.7 - 33.0 - 35.2 - 37.7 - 40.1 - 42.6 - 45.2 - 47.9 - 50.6 - 53.5 - 56.4 |S12| 0.0256 0.0262 0.0267 0.0272 0.0277 0.0282 0.0290 0.0296 0.0302 0.0310 0.0317 0.0324 0.0333 0.0340 0.0350 0.0361 0.0371 0.0379 0.0386 0.0394 0.0406 0.0418 0.0429 0.0440 0.0452 0.0468 0.0480 0.0494 0.0509 0.0528 0.0543 0.0560 0.0580 0.0600 0.0621 0.0643 0.0665 0.0690 0.0714 0.0739 0.0766 0.0792 0.0819 0.0849 S12 8.8 8.8 8.6 8.2 8.0 8.1 7.7 7.3 7.1 6.6 6.4 5.8 5.3 4.9 4.5 3.8 2.7 1.9 0.9 0.9 0.3 - 0.6 - 1.4 - 2.2 - 2.9 - 3.6 - 5.0 - 5.8 - 6.4 - 7.8 - 8.7 - 9.9 - 11.0 - 12.2 - 13.5 - 15.0 - 16.6 - 18.1 - 19.8 - 21.5 - 23.4 - 25.3 - 27.3 - 29.5 |S22| 0.743 0.742 0.741 0.740 0.739 0.736 0.735 0.733 0.731 0.729 0.727 0.725 0.722 0.721 0.719 0.716 0.713 0.711 0.708 0.705 0.702 0.698 0.695 0.691 0.688 0.686 0.679 0.675 0.670 0.666 0.661 0.656 0.650 0.646 0.641 0.635 0.628 0.621 0.615 0.609 0.602 0.596 0.589 0.583 S22 163.4 163.0 162.6 162.0 161.6 161.0 160.6 160.1 159.5 159.0 158.5 157.9 157.6 156.8 156.3 155.8 155.2 154.6 154.0 153.4 152.8 152.2 151.5 150.9 150.2 149.5 148.9 148.2 147.5 146.8 146.1 145.3 144.7 143.8 143.0 142.2 141.3 140.6 139.8 138.9 138.1 137.2 136.3 135.3 MRFG35010AR1 RF Device Data Freescale Semiconductor 13 Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25C, 50 ohm system) (continued) f GHz 4.70 4.75 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25 5.30 5.35 5.40 5.45 5.50 5.55 5.60 5.65 5.70 5.75 5.80 5.85 5.90 5.95 6.00 6.05 6.10 6.15 6.20 6.25 6.30 6.35 6.40 6.45 6.50 6.55 6.60 6.65 6.70 6.75 6.80 6.85 S11 |S11| 0.717 0.705 0.693 0.682 0.670 0.658 0.647 0.636 0.625 0.615 0.607 0.599 0.594 0.590 0.589 0.588 0.590 0.593 0.598 0.605 0.616 0.629 0.648 0.668 0.687 0.706 0.726 0.746 0.766 0.785 0.803 0.820 0.838 0.853 0.867 0.880 0.892 0.902 0.911 0.918 0.926 0.933 0.938 0.946 86.7 83.2 79.6 75.8 71.7 67.4 62.9 58.1 53.1 47.9 42.3 36.5 30.4 24.0 17.5 10.7 3.7 - 3.2 - 10.1 - 17.0 - 23.5 - 29.8 - 36.1 - 42.5 - 48.8 - 54.8 - 60.5 - 66.1 - 71.3 - 76.3 - 81.1 - 85.6 - 90.0 - 94.2 - 98.2 - 102.0 - 105.6 - 109.0 - 112.2 - 115.3 - 118.2 - 121.0 - 123.7 - 126.3 |S21| 1.459 1.482 1.505 1.530 1.554 1.578 1.602 1.626 1.649 1.672 1.694 1.713 1.731 1.750 1.764 1.776 1.785 1.787 1.784 1.777 1.767 1.757 1.744 1.724 1.697 1.664 1.627 1.587 1.542 1.494 1.441 1.388 1.332 1.274 1.216 1.157 1.099 1.041 0.985 0.929 0.876 0.825 0.777 0.729 S21 - 59.3 - 62.4 - 65.6 - 68.8 - 72.2 - 75.6 - 79.2 - 82.8 - 86.6 - 90.4 - 94.4 - 98.5 - 102.7 - 107.0 - 111.4 - 116.0 - 120.8 - 125.6 - 130.4 - 135.3 - 140.2 - 145.1 - 150.3 - 155.6 - 160.9 - 166.2 - 171.5 - 176.8 178.0 172.8 167.6 162.4 157.3 152.3 147.5 142.7 138.0 133.5 129.2 125.0 120.9 116.9 112.9 109.2 |S12| 0.0880 0.0913 0.0945 0.0977 0.1016 0.1051 0.1089 0.1127 0.1167 0.1207 0.1244 0.1281 0.1319 0.1357 0.1392 0.1428 0.1461 0.1488 0.1514 0.1533 0.1551 0.1571 0.1584 0.1596 0.1599 0.1597 0.1589 0.1578 0.1562 0.1542 0.1515 0.1484 0.1450 0.1410 0.1368 0.1323 0.1280 0.1236 0.1193 0.1149 0.1102 0.1058 0.1012 0.0968 S12 - 31.6 - 33.8 - 36.1 - 38.6 - 41.2 - 43.8 - 46.6 - 49.6 - 52.7 - 56.1 - 59.5 - 62.9 - 66.6 - 70.3 - 74.2 - 78.2 - 82.6 - 86.7 - 91.0 - 95.6 - 100.0 - 104.5 - 109.1 - 113.9 - 118.7 - 123.7 - 128.5 - 133.4 - 138.3 - 143.2 - 148.1 - 153.0 - 157.8 - 162.5 - 167.0 - 171.3 - 175.6 - 179.7 176.3 172.1 168.3 164.6 161.0 157.4 |S22| 0.576 0.568 0.560 0.553 0.544 0.536 0.527 0.519 0.510 0.502 0.492 0.482 0.471 0.460 0.449 0.436 0.423 0.407 0.392 0.373 0.354 0.334 0.314 0.294 0.275 0.257 0.243 0.234 0.231 0.236 0.249 0.269 0.293 0.322 0.355 0.388 0.423 0.457 0.490 0.523 0.555 0.585 0.613 0.641 S22 134.4 133.4 132.3 131.2 130.0 128.9 127.6 126.2 124.8 123.1 121.3 119.4 117.2 114.9 112.3 109.4 106.0 102.4 98.2 93.6 88.4 82.7 76.0 68.3 59.4 49.1 37.5 24.5 10.5 - 3.7 - 17.1 - 29.9 - 41.1 - 51.0 - 59.8 - 67.7 - 74.6 - 81.0 - 86.7 - 91.9 - 96.8 - 101.4 - 105.6 - 109.5 MRFG35010AR1 14 RF Device Data Freescale Semiconductor Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25C, 50 ohm system) (continued) f GHz 6.90 6.95 7.00 7.05 7.10 7.15 7.20 7.25 7.30 7.35 7.40 7.45 7.50 7.55 7.60 7.65 7.70 7.75 7.80 7.85 7.90 7.95 8.00 S11 |S11| 0.948 0.950 0.952 0.953 0.953 0.954 0.956 0.957 0.958 0.959 0.961 0.961 0.959 0.960 0.960 0.960 0.962 0.967 0.970 0.974 0.975 0.973 0.973 - 128.8 - 131.1 - 133.3 - 135.3 - 137.2 - 139.1 - 140.8 - 142.4 - 144.1 - 145.5 - 147.0 - 148.5 - 149.8 - 151.1 - 152.3 - 153.4 - 154.4 - 155.4 - 156.6 - 157.8 - 158.9 - 159.9 - 161.0 |S21| 0.684 0.638 0.598 0.561 0.526 0.493 0.462 0.434 0.407 0.382 0.359 0.337 0.316 0.297 0.279 0.263 0.247 0.234 0.221 0.209 0.198 0.186 0.176 S21 105.6 102.3 99.2 96.2 93.3 90.4 87.7 85.1 82.7 80.3 77.9 75.7 73.6 71.6 69.8 67.9 66.3 64.8 63.0 61.4 59.7 58.0 56.5 |S12| 0.0930 0.0882 0.0843 0.0805 0.0771 0.0738 0.0701 0.0672 0.0645 0.0617 0.0589 0.0561 0.0535 0.0515 0.0496 0.0476 0.0459 0.0446 0.0430 0.0414 0.0397 0.0379 0.0360 S12 154.1 151.3 148.5 145.7 142.9 140.2 137.8 135.5 133.4 130.8 128.7 126.6 125.1 123.7 122.1 120.3 118.9 117.2 115.2 113.5 111.3 109.5 108.7 |S22| 0.665 0.688 0.711 0.730 0.750 0.770 0.786 0.802 0.817 0.831 0.843 0.855 0.865 0.877 0.887 0.895 0.905 0.912 0.917 0.923 0.928 0.934 0.941 S22 - 113.3 - 116.7 - 119.9 - 122.8 - 125.6 - 128.3 - 131.0 - 133.4 - 135.7 - 138.0 - 140.0 - 141.9 - 143.8 - 145.8 - 147.6 - 149.4 - 151.0 - 152.6 - 154.2 - 155.6 - 156.9 - 158.3 - 159.5 MRFG35010AR1 RF Device Data Freescale Semiconductor 15 NOTES MRFG35010AR1 16 RF Device Data Freescale Semiconductor NOTES MRFG35010AR1 RF Device Data Freescale Semiconductor 17 NOTES MRFG35010AR1 18 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2x K G 1 (INSULATOR) S (FLANGE) 2 B bbb 3 2x M TA M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED .030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX .795 .805 .225 .235 .125 .176 .034 .044 .055 .065 .004 .006 .562 BSC .077 .087 .085 .115 .355 .365 .355 .365 .125 .135 .225 .235 .225 .235 .005 .010 .015 MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.47 0.89 1.12 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 2.16 2.92 9.02 9.27 9.96 10.16 3.18 3.43 5.72 5.97 5.72 5.97 0.13 0.25 0.38 B bbb M D TA 2x M Q bbb M TA M B M B M N (LID) ccc M TA M B M R (LID) ccc C M TA M B H M E F T SEATING PLANE (INSULATOR) M DIM A B C D E F G H K M N Q R S aaa bbb ccc aaa A A M TA M B M STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE CASE 360D - 02 ISSUE C NI - 360HF MRFG35010AR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRFG35010AR1 Rev. 20 1, 6/2006 Document Number: MRFG35010A RF Device Data Freescale Semiconductor |
Price & Availability of MRFG35010AR1 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |