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| STN3PF06 P-CHANNEL 60V - 0.18 - 3A SOT-223 STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 s s s s s VDSS 60V RDS(on) <0.20 ID 2.5A 2 TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 1 SOT-223 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 20 2.5 1.5 10 2.5 0.02 6 -65 to 175 150 (1)ISD 3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. Unit V V V A A A W W/C V/ns C C (q) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and current has to be reversed January 2001 1/6 STN3PF06 THERMAL DATA Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 50 60 260 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 1.25 A VDS > ID(on) x RDS(on)max, VGS = 10V 2.5 Min. 2 0.18 Typ. Max. 4 0.20 Unit V A DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =1.25 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.5 850 230 75 Max. Unit S pF pF pF 2/6 STN3PF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30V, ID = 6A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID = 12A, VGS = 10 V Min. Typ. 20 40 16 4 6 21 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(off) tf tc Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 30V, ID = 6A, RG = 4.7, VGS = 10V (see test circuit, Figure 3) Vclamp =48V, ID =12 A RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 40 10 Max. Unit ns ns Off-voltage Rise Time Fall Time Cross-over Time 10 17 30 ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.5A, VGS = 0 ISD = 12A, di/dt = 100A/s, VDD = 30V, Tj = 150C (see test circuit, Figure 5) 100 260 5.2 Test Conditions Min. Typ. Max. 2.5 10 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STN3PF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STN3PF06 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 5/6 STN3PF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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