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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS45A Low-leakage diode Product specification Supersedes data of June 1994 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode FEATURES * Continuous reverse voltage: max. 125 V * Repetitive peak forward current: max. 625 mA * Low reverse current: max. 1 nA * Switching time: typ. 1.5 s. APPLICATION * Low leakage current applications. k handbook, halfpage a BAS45A DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. MAM156 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 tp = 1 s tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board without metallization pad. total power dissipation storage temperature junction temperature Tamb = 25 C - - - - -65 - 4 1 0.5 300 +175 175 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 125 125 250 625 V V mA mA UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Low-leakage diode ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 100 mA IR reverse current see Fig.5 VR = 125 V; Emax = 100 lx VR = 30 V; Tj = 125 C; Emax = 100 lx VR = 125 V; Tj = 125 C; Emax = 100 lx VR = 125 V; Tj = 150 C; Emax = 100 lx Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - - - - - 1.5 - - - CONDITIONS TYP. BAS45A MAX. 780 860 1000 1 300 500 2 4 - UNIT mV mV mV nA nA nA A pF s THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS 8 mm from the body lead length 10 mm; note 1 VALUE 300 500 UNIT K/W K/W 1996 Mar 13 3 Philips Semiconductors Product specification Low-leakage diode GRAPHICAL DATA BAS45A handbook, halfpage 300 MBG522 handbook, halfpage 300 MBG523 IF (mA) 200 IF (mA) (1) (2) (3) 200 100 100 0 0 100 Tamb (oC) 0 200 0 0.5 1.0 VF (V) 1.5 Device mounted on a printed-circuit board without metallization pad. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 10 102 103 tp (s) 104 Based on square wave currents;Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Mar 13 4 Philips Semiconductors Product specification Low-leakage diode BAS45A 10 4 handbook, halfpage IR (nA) 3 10 MBD456 handbook, halfpage 3 MBG524 Cd (pF) 10 2 max 2 10 typ 1 1 10 1 0 0 50 100 T j ( oC) 150 0 5 10 15 VR (V) 20 VR = 125 V. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 i VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal Fig.7 Reverse recovery time test circuit and waveforms. 1996 Mar 13 5 Philips Semiconductors Product specification Low-leakage diode PACKAGE OUTLINE BAS45A handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The black marking band indicates the cathode. Fig.8 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Mar 13 6 |
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