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Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance
BYV74W series
SYMBOL
QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V
a1 1 k2
a2 3
VF 1.12 V IO(AV) = 30 A trr 60 ns SOT429 (TO247)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV74W series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV74W Tmb 136C square wave; = 0.5; Tmb 94 C t = 25 s; = 0.5; Tmb 94 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 30 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A C C
Tstg Tj
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 45 MAX. 2.4 1.4 UNIT K/W K/W K/W
1 Neglecting switching and reverse current losses. April 1998 1 Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s MIN. -
BYV74W series
TYP. 0.95 1.08 1.15 10 0.3 40 50 4.2 2.5
MAX. 1.12 1.25 1.36 50 0.8 60 60 5.2 -
UNIT V V V A mA nC ns A V
I
dI F dt
F
30 25
PF / W
Vo = 0.8900 V Rs = 0.0137 Ohms
BYV44
Tmb(max) / C 88 D = 1.0 90 0.5 102 114
tp T t
t
rr time
20 15 10 0.2 0.1
Q I R I
s
10%
100%
5
I
tp
D=
126 138
T
rrm
0
0
5
10 15 IF(AV) / A
20
150 25
Fig.1. Definition of trr, Qs and Irrm
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x D.
BYV44
I
F
20
PF / W
Vo = 0.89 Rs = 0.0137
Tmb(max) / C 102 a = 1.57 1.9 2.2 114
15 4 10
2.8
time VF V VF time
126
5
138
fr
0 0 5 10 150 15
IF(AV) / A
Fig.2. Definition of Vfr
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
April 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
BYV74W series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100 1A
100
2A
10 Tj = 25 C Tj = 100 C 1 1 10 dIF/dt (A/us) 100
10
1
1.0
10 -dIF/dt (A/us)
100
Fig.5. Maximum trr at Tj = 25C and 100C; per diode
Fig.8. Maximum Qs at Tj = 25C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100
0.001 1us 10us
T
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E
10s
Fig.6. Maximum Irrm at Tj = 25C and 100C; per diode
Fig.9. Transient thermal impedance per diode Zth j-mb= f(tp)
50
IF / A Tj = 25 C Tj = 150 C
BYV74
40
30 typ 20 max
10
0
0
0.5
1 VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj
April 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
BYV74W series
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.10. SOT429 (TO247); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
April 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV74W series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1998
5
Rev 1.000

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