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| FDMA1027P Dual P-Channel PowerTrench(R) MOSFET October 2005 FDMA1027P Dual P-Channel PowerTrench(R) MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 G1 D2 D2 S1 Features * -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5V RDS(ON) = 160 m @ VGS = -2.5V RDS(ON) = 240 m @ VGS = -1.8V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 MicroFET Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1a) Units V V A W C -2.2 -6 1.4 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) C/W Package Marking and Ordering Information Device Marking 027 Device FDMA1027P Reel Size 7 in Tape width 8 mm Quantity 3000 units (c)2005 Fairchild Semiconductor Corporation FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V Min Typ Max Units -20 -12 -1 100 V mV/C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -2.5 A VGS = -1.8 V, ID = -1.0 A VGS= -4.5 V, ID = -3.0 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -3.0 A -0.4 -0.7 2 90 120 172 118 -1.5 V mV/C 120 160 240 160 m ID(on) gFS On-State Drain Current Forward Transconductance -20 7 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 435 80 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 9 11 15 6 18 19 27 12 6 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -3.0 A, 4 0.8 0.9 FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -1.1 A V ns nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -1.1 A IF = -3.0 A, dIF/dt = 100 A/s (Note 2) -0.8 17 6 -1.2 Notes: 2 1. RJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 173C/W when mounted on a minimum pad of 2 oz copper (d) RJA = 151C/W when mounted on a minimum pad of 2 oz copper (c) RJA = 69C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics 6 VGS = -4.5V -2.5V -2.0V -3.5V -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = -1.5V 2.6 2.2 1.8 1.4 1 0.6 5 -ID, DRAIN CURRENT (A) 4 -1.8V 3 2 -1.5V -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V 1 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.28 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -3.0A VGS = -4.5V ID = -1.5A 1.3 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.22 0.16 TA = 125 C o 0.1 TA = 25 C o 0.04 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 6 VDS = -5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 1 5 -ID, DRAIN CURRENT (A) 4 3 2 1 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 C o 0.1 TA = 125oC 0.01 25 C 0.001 -55oC o -55oC o 25 C 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 700 600 CAPACITANCE (pF) VDS = -5V -15V 500 400 300 200 100 Crss f = 1MHz VGS = 0 V 4 3 -10V Ciss 2 Coss 1 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 40 SINGLE PULSE RJA = 173C/W TA = 25C 10 RDS(ON) LIMIT 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE o RJA = 173 C/W TA = 25oC 1ms 100us 30 1 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA =173 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1027P Rev C1 (W) FDMA1027P Dual P-Channel PowerTrench(R) MOSFET FDMA1027P Rev C1 (W) |
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