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DG444B/445B
New Product
Vishay Siliconix
Improved Quad SPST CMOS Analog Switches
FEATURES
D D D D D Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action--tON: 120 ns Low Charge Injection TTL/CMOS Logic Compatible
BENEFITS
D D D D D Low Signal Errors and Distortion Reduced Power Supply Consumption Faster Throughput Reduced Pedestal Errors Simple Interfacing
APPLICATIONS
D D D D D D Audio Switching Data Acquisition Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments
DESCRIPTION
The DG444B/445B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B/445B are upgrades to the original DG444/445. Combing low on-resistance (45 , typ.) with high speed (tON 120 ns, typ.), the DG444B/445B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits. The DG444B/445B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup. When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG444B
Dual-In-Line and SOIC IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3
TRUTH TABLE
Logic
0 1
DG444B
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG445B
OFF ON
DG444B QFN16 (4x4 mm)
D1 IN1 IN2 D2 16 15 14 13
ORDERING INFORMATION
Temp Range Package
16-Pin 16 Pin Plastic DIP 12 11 10 9 S2 V+ VL S3 16-Pin 16 Pin QFN 4x4 mm -40 to 85_C 40 16-Pin 16 Pin Narrow SOIC
Part Number
DG444BDJ DG445BDJ DG444BDY DG445BDY DG444BDN DG445BDN
S1 V- GND S4
1 2 3 4
5
6
7
8
D4 IN4 IN3 D3 Top View Document Number: 72626 S-32554--Rev. A, 15-Dec-03 www.vishay.com
1
DG444B/445B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 8 mW/_C above 75_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW QFN-16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
New Product
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) VD = #14 V VS = #14 V V, IS = 1 mA, VD = #10 V Full Room Full Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 -15 45 "0.01 "0.01 #0.02 15 80 95 0.5 5 0.5 5 0.5 10 nA V W
Limits
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
VS = VD = #14 V
Digital Control
Input Voltage Low Input Voltage High Input Current VIN Low Input Current VIN High VINL VINH IINL IINH VIN under test = 0.8 V, All Other = 2.4 V VIN under test = 2.4 V, All Other = 0.8 V Full Full Full Full 2.4 -1 -1 -0.01 0.01 1 1 0.8 V
mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Off Injectione tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) RL = 1 kW , CL = 35 pF VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W , CL = 15 pF, VS = 1 VRMS f = 100 kHz VS = 0 V f = 100 kHz V, VS VD = 0 V, f = 1 MHz Room Room Room Room Room Room Room Room 1 90 95 5 5 16 p pF 300 200 ns pC dB
Isolatione
Crosstalk (Channel-to-Channel)d Source Off Capacitance Drain Off Capacitance Channel On Capacitance
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current I+ I- IIN VIN = 0 or 5 V Room Full Room Full Room Full -1 -5 1 5 Document Number: 72626 S-32554--Rev. A, 15-Dec-03 1 5 mA
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DG444B/445B
New Product
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistanced VANALOG rDS(on) IS = 1 mA, VD = 3 V, 8 V Full Room Full 0 90 12 160 200 V W
Vishay Siliconix
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW , CL = 35 pF, VS = 8 V See Figure 2 CL = 1 nF, Vgen = 6 V, Rgen = 0 W Room Room Room 120 60 4 300 200 ns pC
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current I+ VIN = 0 or 5 V I- IIN VL = 5.25 V, VIN = 0 or 5 V Room Full Room Full Room Full -1 -5 1 5 1 5 mA
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110 r DS(on) Drain-Source On-Resistance ( W ) - r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V 100 90 80 70 60 50 40 30 20 10 0 -15
rDS(on) vs. VD and Temperature
V+ = 15 V V- = -15 V
125_C 85_C 25_C -55_C
-10
-5
0
5
10
15
VD - Drain Voltage (V)
Document Number: 72626 S-32554--Rev. A, 15-Dec-03
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3
DG444B/445B
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
250 r DS(on) Drain-Source On-Resistance ( W ) -
rDS(on) vs. VD and Single Power Supply Voltages
V+ = 5 V
Leakage Currents vs. Analog Voltage
40 30 20 I S,I D - Current (pA) 10 0 -10 -20 -30 -40 -20 IS(off), ID(off) V+ = 22 V V- = -22 V TA = 25_C ID(on)
225 200 175 150 125 100 75 50 25 0 0 2 4
7V 10 V 12 V 15 V
6
8
10
12
14
16
-15
-10
-5
0
5
10
15
20
VD - Drain Voltage (V)
VANALOG - Analog Voltage (V)
1 nA
Leakage Current vs. Temperature
V+ = 15 V V- = -15 V VS, VD = "14 V
30 20 10 0 -10 -20
QS, QD - Charge Injection vs. Analog Voltage
I S,I D - Current
Q - Charge (pC)
100 pA
V+ = 15 V V- = -15 V
IS(off), ID(off) 10 pA
V+ = 12 V V- = 0 V
1 pA -55
-35
-15
5
25
45
65
85
105 125
-30 -15
-10
-5
0
5
10
15
Temperature (_C)
VANALOG - Analog Voltage (V)
Off Isolation vs. Frequency
120 110 100 90 80 70 60 50 40 10 k 100 k 1M 10 M f - Frequency (Hz) V+ = +15 V V- = -15 V
OIRR (dB)
RL = 50 W
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Document Number: 72626 S-32554--Rev. A, 15-Dec-03
DG444B/445B
New Product
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
Vishay Siliconix
S VL Level Shift/ Drive V-
VIN
V+ GND D
V-
FIGURE 1.
TEST CIRCUITS
+5 V +15 V Logic Input VL "10 V S IN 3V GND V- Switch Output Note: 0V tON Logic input waveform is inverted for DG445. V+ D RL 1 kW CL 35 pF 0V VO Switch Input VS VO tOFF 80% 80% 3V 50% 50% tr <20 ns tf <20 ns
-15 V CL (includes fixture and stray capacitance)
FIGURE 2. Switching Time
+5 V +15 V
DVO VO
Rg
VL S IN
V+ D CL 1 nF V- VO
INX (DG444B)
Vg
OFF
ON
OFF
3V GND
-15 V
INX (DG445B)
OFF
ON Q = DVO x CL
OFF
FIGURE 3. Charge Injection
Document Number: 72626 S-32554--Rev. A, 15-Dec-03
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DG444B/445B
Vishay Siliconix
TEST CIRCUITS
C = 1 mF tantalum in parallel with 0.01 mF ceramic +5 V +15 V C +5 V +15 V
New Product
C
VS Rg = 50 W
S1 IN1 0V, 2.4 V NC 0V, 2.4 V S2 IN2
VL
V+
D1 50 W VS Rg = 50 W D2 VO RL 0V, 2.4 V IN S
VL
V+ D
VO
RL
GND
V-
C
GND
V-
C
-15 V VS VO
-15 V XTALK Isolation = 20 log C = RF bypass VS VO
Off Isolation = 20 log
FIGURE 4. Crosstalk
+5 V +15 V C
FIGURE 5. Off Isolation
VL
V+
S Meter
IN 0 V, 2.4 V D GND V- C
HP4192A Impedance Analyzer or Equivalent f = 1 MHz
-15 V
FIGURE 6. Source/Drain Capacitances
APPLICATIONS
+5 V +15 V
+15 V
VL
1/
V+
4 DG444B
+15 V VOUT 10 kW 0V
+5 V 0V VIN GND V-
FIGURE 7. Level Shifter
www.vishay.com Document Number: 72626 S-32554--Rev. A, 15-Dec-03
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DG444B/445B
New Product
APPLICATIONS
Vishay Siliconix
VIN +5V VL
+ - +15 V V+
VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit.
GAIN1 AV = 1
R1 90 kW R2 5 kW With SW4 Closed: VOUT VIN = R1 + R2 + R3 + R4 R4 = 100
GAIN2 AV = 10
GAIN3 AV = 20 GAIN4 AV = 100
R3 4 kW R4 1 kW
DG444B or DG445B
V- GND
-15 V
FIGURE 8. Precision-Weighted Resistor Programmable-Gain Amplifier
+5 V V1
+15 V
DG444B
+15 V -15 V - VIN + 5 MW 5.1 MW 30 pF -15 V C1 50 pF V2 C2 1000 pF
Logic Input Low = Sample High = Hold
+15 V J202 R1 200 kW J500 2N4400 VOUT GND J507
FIGURE 9. Precision Sample-and-Hold
Document Number: 72626 S-32554--Rev. A, 15-Dec-03
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