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| Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 200Volt, 0.505 , RAD Hard MOSFET Package: SMD-0.5 Product Summary Hex Size 3 Technology RAD Hard BV DSS -200V RDS (on) 0.505 ID -8.0A 2N7522 R5 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C PD @ TC = 25C VGS EAS IAR EAR TJ Continuous Drain Current Continuous Drain Current Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction Range Value -8.0 -5.0 75 20 75 -8.0 7.5 -55 to 150 Units A A W V mJ A mJ C Pre-Irradiation Electrical Characteristics @ T J = 25 C (Unless Otherwise Specified) Parameter BVDSS RDS(on) VGS (th) IDSS IDSS IGSS IGSS Qg Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Min -200 -2.0 Typ. Max 0.505 -4.0 -10 -25 -100 100 43 Units V V A A nA nA nC Test Conditions VGS=0V, ID=-1.0mA VGS=-12V, ID=-5.0A VDS=VGS, ID=-1.0mA VDS= -160V, VGS=0V VDS =-160V, TJ=125C VGS=-20V VGS=20V VGS=-12V, ID=-8.0A Thermal Resistance Parameter RthJC Junction-to-Case Min Typ. Max 1.67 Units C/W 01/23/01 Test Conditions |
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