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| AF9410N N-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Product Summary BVDSS (V) 30 RDS(ON) (m) 18 ID (A) 9.6 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SOP-8 Ordering information AX Feature F :MOSFET PN 9410N X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.3 Nov 19, 2004 1/5 AF9410N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25C TA=70C TA=25C Rating 30 25 9.6 7.7 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 50 Units C/W Electrical Characteristics at TJ=25C unless otherwise specified Symbol BVDSS BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss RG Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=9A VGS=4.5V, ID=7A VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=9A, VDS=20V, VGS=4.5V VDS=15V, ID=1A, RG=3.3, VGS=10V RD=15 VGS=0V, VDS=25V, f=1.0MHz f=1.0MHz Min. 30 1 Typ. 0.04 13 11 3 7 10 6 23 7 840 190 140 1.4 Max. 18 28 3 1 uA 25 100 18 1350 nA nC Units V V/oC m V S ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge 2 Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dl/dt=100A/s o Min. - Typ. 18 8 Max. 1.2 - Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board, t 10 sec; 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width 300us, duty cycle 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.3 Nov 19, 2004 AF9410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.3 Nov 19, 2004 AF9410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.3 Nov 19, 2004 AF9410N N-Channel Enhancement Mode Power MOSFET Marking Information SOP-8L ( Top View ) 8 Logo Part Number 9410 N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SOP-8L E H L VIEW "A" D 7 (4X) A2 A 0.015x45 7 (4X) A1 e B y C VIEW "A" Symbol A A1 A2 B C D E e H L y Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 8O 0O Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.3 Nov 19, 2004 |
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