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BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type BAR66 Marking PMs Ordering Code (taped) Q62702-A1473 Pin Configuration 1 2 A1 C2 Package 3 C1/A2 SOT-23 1) Maximum Ratings Parameter Reverse voltage Forward current Forward current (tp = 1S) Power dissipation TS 25C 1) Operating temperature range Storage temperature range Symbol BAR66 150 200 20 250 -55...+150 -55...+150 Unit V mA A mW C C VR IF IF Ptot Top Tstg Thermal Resistance Junction-ambient 1) Rth JA 450 K/W ____________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 05.05.94 BAR66 Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Reverse current IR = 5 A Forward voltage IF = 50 mA Diode capacitance VR = 35 V,f=1M Hz VR = 0 V ,f=100 MHz Forward resistance Symbol min. VR Value typ. 0.95 0.4 0.35 1.5 0.7 2 max. Unit V 150 VF V 1.2 pF 0.6 s - CT - rf - IF = 10 mA, f = 100 MHz Charge carrier lifetime IF=10 mA,IR = 6 mA,IR = 3 mA Series inductance L LS - nH Dioden capacitance CT = f (VR*) f = 1 MHz Semiconductor Group 2 Edition A01, 05.05.94 |
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