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| LOW NOISE L TO Ku BAND GaAs MESFET FEATURES * LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 * LG = 0.3 m, WG = 280 m * ION IMPLANTATION DESCRIPTION The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL SPECIFICATIONS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz Associated Gain at VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA Transconductance, VDS = 3 V, IDS = 10 mA Gate to Source Leakage Current, VGS = -4 V Thermal Resistance (Channel to Case) UNITS dB dB dB dB dBm mA V mS A C/W 15 -3.0 30.0 NE76000 00 (CHIP) MIN TYP MAX 0.6 1.6 13.0 9.0 14.5 30 -0.8 40.0 1.0 10.0 190 50 -0.5 50 -3.0 -0.8 30.0 1.0 190 80 -0.5 NE76000L 00 (CHIP) MIN TYP MAX 1.8 1.8 GA1 8.0 8.0 P1dB IDSS VP gm IGSO RTH (CH-C)2 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories Associated Gain, GA (dB) * HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz NE76000 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGD VGS IDS PIN TCH TSTG PT2 PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current RF Input (CW) Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA dBm C C mW RATINGS 5 -5 -3 IDSS +15 175 -65 to +175 240 TYPICAL NOISE PARAMETERS1 (VDS = 3.0, IDS = 10 mA) FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 NFOPT (dB) 0.50 0.55 0.60 0.80 1.00 1.30 1.60 1.90 2.30 2.60 GA (dB) 23.88 21.78 18.93 16.28 14.67 12.97 11.58 10.24 9.42 8.39 MAG .84 .76 .70 .64 .60 .56 .52 .49 .48 .47 OPT ANG 12 25 45 65 83 99 114 125 135 145 Rn/50 .69 .63 .49 .41 .36 .32 .27 .23 .20 .18 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on a copper heat sink. Note: 1. Noise parameters include bond wires: Gate: 2 wires total, 1 per bond pad, 0.0139" long each wire. Drain: 2 wires total, 1 per bond pad, 0.0115" long each wire. Sources: 4 wires total, 2 per side, 0.0066" long each wire. Wire: 0.0007" diameter, gold. TYPICAL PERFORMANCE CURVES (TA = 25 C) POWER DERATING CURVE 300 2.5 NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT 15 Total Power Dissipation, PT (mW) 200 Infinite Heat sink 2 GA 10 150 100 NF 1.5 5 50 0 0 25 50 75 100 125 150 175 200 0 0 5 10 15 20 25 Ambient Temperature, TA (C) DRAIN CURRENT vs. GATE VOLTAGE (TYP) VDS = 3 V, VP = -0.8 V 35 35 Drain Current, IDS (mA) DC PERFORMANCE 30 30 Drain Current, IDS (mA) Drain Current, IDS (mA) VGS = 0 V 25 20 VGS = -. 2 V 15 10 VGS = -.4 V 5 25 20 15 10 5 VGS = -.6 V 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Gate to Source Voltage, VGS (V) Drain Voltage, VDS (V) Associated Gain, GA (dB) 250 Noise Figure, NF (dB) NE76000 TYPICAL COMMON SOURCE SCATTERING PARAMETERS j50 j25 j100 j150 +90 +120 +60 +150 j10 S11 26 GHz j250 +30 0 10 25 50 100 150 250 500 S22 26 GHz -j10 S22 0.1 GHz S11 0.1 GHz S12 0.1 GHz +180 - S21 0.1 GHz 1 2 S12 26 GHz S21 26 GHz .15 .20 .25 0 -j250 -150 -j150 3 4 -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 10 mA) -120 S21 5 -90 -60 NE760001 VDS = 3 V, ID = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 MAG 0.999 0.999 0.998 0.996 0.993 0.985 0.969 0.947 0.923 0.890 0.874 0.855 0.825 0.808 0.766 0.741 0.723 0.700 0.677 0.665 0.638 0.616 S11 ANG -2.0 -3.0 -7.0 -13.0 -20.0 -27.0 -39.0 -50.0 -61.0 -70.0 -78.0 -87.0 -96.0 -104.0 -120.0 -135.0 -147.0 -155.0 -162.0 -171.0 178.0 164.0 MAG 3.291 3.282 3.280 3.265 3.218 3.185 3.079 2.950 2.814 2.669 2.545 2.446 2.328 2.237 2.077 1.926 1.800 1.653 1.528 1.464 1.390 1.286 S21 ANG 179.0 178.0 175.0 169.0 164.0 158.0 148.0 138.0 129.0 120.0 113.0 104.0 97.0 90.0 76.0 63.0 53.0 43.0 35.0 26.0 16.0 7.0 MAG 0.002 0.004 0.010 0.020 0.030 0.039 0.057 0.072 0.085 0.094 0.104 0.110 0.114 0.119 0.132 0.134 0.134 0.130 0.121 0.115 0.121 0.123 S12 ANG 90.0 89.0 85.0 81.0 78.0 74.0 66.0 59.0 51.0 47.0 41.0 36.0 30.0 29.0 19.0 12.0 6.0 3.0 4.0 4.0 5.0 4.0 MAG 0.677 0.677 0.675 0.673 0.671 0.666 0.655 0.640 0.621 0.602 0.590 0.579 0.565 0.565 0.558 0.549 0.553 0.530 0.519 0.520 0.537 0.538 S22 ANG -1.0 -2.0 -4.0 -8.0 -12.0 -16.0 -23.0 -30.0 -36.0 -42.0 -47.0 -53.0 -58.0 -63.0 -73.0 -81.0 -88.0 -94.0 -99.0 -107.0 -116.0 -123.0 0.06 0.02 0.04 0.05 0.04 0.07 0.12 0.17 0.24 0.30 0.34 0.38 0.45 0.45 0.52 0.59 0.64 0.80 0.98 1.08 1.08 1.18 K S21 (dB) 10.3 10.3 10.3 10.2 10.1 10.0 9.7 9.3 8.9 8.5 8.1 7.7 7.3 6.9 6.3 5.6 5.1 4.3 3.6 3.3 2.8 2.1 MAG2 (dB) 32.1 29.1 25.1 22.1 20.3 19.1 17.3 16.1 15.1 14.5 13.8 13.4 13.1 12.7 11.9 11.5 11.2 11.0 11.0 9.3 8.8 7.5 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 1 per bond pad, 0.0139" (354 m) long each wire. Drain: Total 2 wire(s), 1 per bond pad, 0.0115" (291 m) long each wire. Source: Total 4 wire (s), 2 per side, 0.0066" (168 m) long each wire. Wire: 0.0007" (17.8 m) Diameter, Gold. 2. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE76000 NE76000 LINEAR MODEL SCHEMATIC LG 0.155 GATE RG 2.5 GGS 1E-6 CDG 0.035 CGS 0.25 CDC 0.035 g= 46ms f= 200GHz t= 2psec RD 2 LD 0.05 DRAIN RDS 220 CDS 0.085 RI 2 RS 3 LS 0.02 SOURCE UNITS Parameter capacitance inductance resistance conductance Units picofarads nanohenries ohms millisiemans MODEL RANGE Frequency: Bias: Date: 0.05 to 26 GHz VDS = 3 V, ID = 10 mA 7/19/96 NE76000 NE76000 NONLINEAR MODEL SCHEMATIC LG GATE 0.14 Q1 76000 RG 1.5 RD 2 R_COMP 480 LD 0.06 DRAIN CRF_X 100 RS 4.6 LS 0.02 SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC(2) Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO(3) CGDO(4) DELTA FC VBR 1 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms Q1 -0.73 0 4 0.063 0 0.06 2.2 0.7 0.626 1.98e-11 1.4 0 0 3.2e-12 0.11e-12 Infinity 0 0.4e-12 0.04e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 0 0 0 0 0 1 27 3 1.43 0 0 1 MODEL RANGE Frequency: 0.05 to 26 GHz Bias: VDS = 3 V, ID = 10 mA Date: 8/30/96 DELTA2 (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD NE76000 OUTLINE DIMENSIONS (Units in m) NE76000 (CHIP) (Units in m) 45045 130 DRAIN DRAIN 62 25 33033 33 S O U R C E GATE 55 GATE S O U R C E 119 49 48 42 46 52 30 Chip Thickness: 140 m20 m Bonding Pad Area Note: All dimensions are typical unless otherwise stated. ORDERING INFORMATION PART NUMBER NE76000L NE76000 IDSS SELECTION (mA) 50 to 80 15 to 50 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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