View STB75NH02L_232164.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STB75NH02L
N-CHANNEL 24V - 0.0062 -75A - D2PAK STripFETTM III POWER MOSFET
TARGET DATA TYPE STB75NH02L
s s s s s s s
VDSS 24V
RDS(on) < 0.008
ID 75A
TYPICAL RDS(on) = 0.0062 @ 10 V TYPICAL RDS(on) = 0.008 @ 5 V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
3 1
D2PAK TO-263 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The STB75NH02L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS
ORDERING INFORMATION
SALES TYPE STB75NH02LT4 MARKING B75NH02L PACKAGE D2PAK PACKAGING TAPE & REEL
July 2003
1/8
STB75NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID ID IDM (5) PTOT EAS (2) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 20 75 53 300 85 1 TBD -55 to 175 Unit V V V V A A A W W/C mJ C
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature for Soldering Purpose 1 62.5 300 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 25 mA, VGS = 0 VDS = 20V VDS = 20V, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10 V, ID = 30 A VGS = 5 V, ID = 30 A 1 0.0062 0.008 0.008 0.014 Min. 24 1 10 100 Typ. Max. Unit V A A nA V
2/8
STB75NH02L
ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC
Symbol gfs (3) Ciss Coss Crss Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f= 1 MHz Gate DC Bias= 0 Test Signal Level= 20 mV Open Drain Test Conditions VDS = 15 V , ID = 30 A VDS = 15 V, f = 1 MHz, VGS = 0 Min. Typ. TBD 2000 420 210 1 Max. Unit S pF pF pF
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Qoss (4) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Test Conditions VDD = 10 V, ID = 37.5 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 10 V, ID =75 A, VGS = 10 V VDS = 16 V, VGS = 0 Min. Typ. TBD TBD 35 TBD TBD TBD 47 Max. Unit ns ns nC nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 10 V, ID = 37.5 A, RG = 4.7 , VGS = 10 V (see test circuit, Figure 3) Min. Typ. TBD TBD Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (1) VSD (3) trr Qrr IRRM
1. 2. 3. 4. 5.
Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
Test Conditions
Min.
Typ.
Max. 75 300
Unit A A V ns nC A
ISD = 37.5 A, VGS = 0 ISD = 75 A, di/dt = 100A/s, VDD = 15V, Tj = 150C (see test circuit, Figure 5) TBD TBD TBD
1.3
Garanted when external Rg = 4.7 and tf < tf max Starting Tj = 25C, ID = 25A, VDD = 15V Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. Qoss = Coss* Vin, Coss = Cgd+Cds. See Appendix A Pulse width limited by safe operating area
3/8
STB75NH02L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
4/8
STB75NH02L
D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
5/8
1
STB75NH02L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W
6/8
BASE QTY 1000
mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
* on sales type
STB75NH02L
Appendix A: Buck Converter Power Losses Estimation
DESCRIPTION The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. The low side (SW2) device requires: - Very low RDS(on) to reduce conduction losses - Small Qgls to reduce the gate charge losses - Small Coss to reduce losses due to output capaci tance - Small Qrr to reduce losses on SW1 during its turn-on - The Cgd/C gs ratio lower than Vth /VGG ratio especially with low drain to source voltage to avoid the cross conduction phenomenon The high side (SW1) device requires: - Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate - Small Qg to have a faster commutation and to reduce gate charge losses - Low RDS(on) to reduce the conduction losses
High Side Switch (SW1)
Low Side Switch (SW2)
Pconduction
Pswitching
RDS(on)SW1 I * *
2 L
RDS(on)SW2* I2 *(1- ) L
Vin *(Qgsth(SW1)+ Qgd(SW1)) *f *
IL Ig
Zero Voltage Switching
Pdiode
Recovery
Not Applicable
1
Vin * Qrr(SW2)*f
Conduction
Not Applicable
Vf(SW2) * IL * t deadtime*f Qgls(SW2)* Vgg * f
Vin *Qoss(SW2)*f 2
Pgate(Q ) G
PQoss
Qg(SW1)* Vgg * f
Vin *Qoss(SW1)*f 2
Parameter Qgsth Qgls Pconduction Pswitching Pdiode Pdiode PQoss
Meaning Duty-Cycle Post Threshold Gate Charge Third Quadrant Gate Charge On State Losses On-off Transition Losses Conduction and Reverse Recovery Diode Losses Gate Drive Losses Output Capacitance Losses
1
Dissipated by SW1 during turn-on
7/8
STB75NH02L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
8/8

▲Up To Search▲

Price & Availability of STB75NH02L

	To Download STB75NH02L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .