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| MRA1014-35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. PACKAGE STYLE .320 SQ 2L FLG C B FEATURES: * Diffused Ballast Resistors. * Internal Matching Network * OmnigoldTM Metalization System E MAXIMUM RATINGS IC VCES VEBO TJ TSTG JC 5.0 A (CONT) 50 V 3.5 V -65 C to +200 C -65 C to +150 C 2.5 C/W CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB c TC = 25 C NONE TEST CONDITIONS IC = 200 mA IE = 2.5 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V Pout = 35 W IC = 1.0 A f = 1.0 MHz f = 1.0 GHz & 1.4 GHz MINIMUM TYPICAL MAXIMUM UNITS 50 3.5 5.0 10 100 24 7.0 50 V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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