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FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
FEATURES High Output Power: 34.0dBm(typ.) High Linear Gain: 26.0dB(typ.) Low VSWR Broad Band: 7.18.5GHz Impedance Matched Zin/Zout = 50 Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 7.1 to 8.5GHz frequency range. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25)
Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg Rating 12 -7 14 -55 to +125 Unit V V dBm
Recommended Operating Condition
Item DC Input Voltage at Tc=25 Input Power at Tc=25 DC Input Current at Tc=25 Operating Case Temperature Symbol VDD Pin IDD Tc Condition 10 12 1200 -40 to +85 Limit Typ. 7.1 - 8.5 VDD=10V VGG=-5V f=7.1 to 8.5GHz 32.0 23.0 VDD=10V,VGG=-5V 34.0 26.0 2.4 2:1 2:1 1100 5.0 50 4.0 2.6 : 1 1200 15.0 Unit V dBm mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25)
Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Gain Flatness Input VSWR Output VSWR DC Input Current DC Input Current Channel Temperature Rise Symbol f P1dB G1dB G VSWRi VSWRo IDD IGG Tch Test Conditions Min. Max. Unit GHz dBm dB dB mA mA
CASE STYLE: VF
Note:G1dB is referenced to Linear Gain measured at Pin=-3dBm.
G.C.P.:Gain Compression Point
ESD
Class 0
199 V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.1 May 2003
1
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
OUTPUT POWER vs. FREQUENCY
VDD=10V,VGG=-5V 38 34 30 26 22
Output Pow e r [dBm ]
OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER
VDD=10V,VGG=-5V
Pin=+11dBm P1dB Pin=+3dBm
36 7.1GHz 7.7GHz 8.5GHz
50
Output P ow e r [dBm ]
32
40 P ow e r Adde d Efficie ncy[%]
28
30
24
20
20
10
Pin=-5dBm
18 7 7.5 8 Frequency [GHz] 8.5
16 -10 -5 0 5 10 15 Input Power [dBm] 0
IMD vs OUTPUT POWER
-20
Intermodulation Distortion [dBc]
VSWR vs. FREQUENCY
VDD=10V, VGG=-5V 3 2.5 INPUT OUTPUT
VDD=10v,VGG=-5v 7.1GHz 7.7GHz 8.5GHz
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15
IM3
VSWR
2 1.5 1 0.5 0
IM5
20 25 2-tone total Pout[dBm]
30
6.5
7
7.5
8
8.5
9
Frequency[GHz]
2
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
DRAIN CURRENT vs OUTPUT POWER
VDD=10V, VGG=-5V 1300 D ra in C u rre n t[m A ] 1200
Phase [deg.]
AMPM vs OUTPUT POWER
VDD=10V,VGG=-5V 20 15 10 5 0 -5 -10 7.1GHz 7.8GHz 8.5GHz
1100 1000 900 18 22 26 30 Output Power[dBm] 34 7.1GHz 7.7GHz 8.5GHz
24
26
28 30 32 Output Power [dBm]
34
36
OUTPUT POWER vs. DRAIN VOLTAGE
VGG=-5V,f=7.7GHz 38 O u tp u t P o w e r [d B m ] 34
P1dB Pin=+11dBm
Drain Current[mA]
DRAIN CURRENT vs OUTPUT POWER
VGG=-5V,f=7.7GHz 1400 1300 1200 1100 1000 900 VDD=8V VDD=9V VDD=10V
30 26 22
Pin=-5dBm Pin=+3dBm
18 7.5 8 8.5 9 9.5 Drain Voltage,VDD[V] 10 10.5
18
22
26 30 Output Power[dBm]
34
3
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER
VGG=-5V,f=7.7GHz
36 32 28 24 20 16 -10 -5 0 5 10 15 Input Power [dBm] 50
OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER
VDD=10V,f=7.7GHz 36 Output Pow er[dB m] 32 28 24 20 16 -10 -5 0 5 10 Input Power[dBm] 15 VGG=-5.5V VGG=-5V VGG=-4.5V 40 35 30 25 20 15 10 5 0
Pow e r Adde d Efficie ncy[%]
Ou tp u t P o w e r [d Bm ]
30 20 10 0
P owe r A dde dE ffic ie nc y[% ]
VDD=8V VDD=9V VDD=10V
40
DRAIN CURRENT vs OUTPUT POWER
VDD=10V,f=7.7GHz
1400 1300 1200 1100 1000 900 800 18 23 28 Output Power[dBm] 33
OUTPUT POWER vs. GATE VOLTAGE
VDD=10V,f=7.7GHz
38
Pin=+11dBm
34 O u tp u t P o w e r [d B m ]
Drain Current[m A]
P1dB
30 26 22 18 -6 -5.5 -5 Gate Voltage,VGG[V]
Pin=+3dBm
VGG=-5.5V VGG=-5V VGG=-4.5V
Pin=-5dBm
-4.5 -4
4
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
S-PARAMETER
+50j +25j +100j
+90
7. 8
+10j +250j
7.1
0
10
25
180 4 0
8 .5GH z 30 Scale for |S 21| Scale for |S 12|
7.8
0
-10j
7. 1 8. H z 5G
-25j -50j
-250j
0.075
-100j
S 11 S 22
0.1 -90
S 12 S 21
VDD=10.0V, VGG=-5.0V
Frequency [GHz] 6.9 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8 8.1 8.2 8.3 8.4 8.5 8.6 S11 MAG 0.22 0.19 0.16 0.12 0.09 0.07 0.09 0.13 0.18 0.23 0.28 0.33 0.36 0.39 0.41 0.42 0.41 0.40 ANG -32.75 -38.49 -42.30 -42.44 -32.59 -2.59 28.05 38.99 40.08 36.58 31.41 24.61 16.99 8.76 -0.24 -9.50 -19.29 -28.69 MAG 20.21 20.78 21.29 21.74 22.04 22.24 22.33 22.35 22.42 22.37 22.44 22.42 22.41 22.35 22.15 21.99 21.71 21.40 S21 ANG -147.13 -171.17 164.64 140.28 115.51 90.84 66.15 41.55 17.21 -7.47 -32.13 -56.99 -82.39 -108.02 -133.79 -160.00 173.43 146.38 MAG 0.0018 0.0017 0.0017 0.0018 0.0020 0.0022 0.0025 0.0028 0.0031 0.0033 0.0036 0.0038 0.0040 0.0042 0.0044 0.0044 0.0043 0.0041 S12 ANG 141.10 139.86 144.62 148.20 146.45 148.64 143.94 139.92 134.35 127.55 121.48 116.50 105.95 97.60 89.83 81.16 72.49 63.50 MAG 0.25 0.18 0.11 0.07 0.08 0.14 0.20 0.25 0.29 0.33 0.36 0.38 0.38 0.37 0.36 0.33 0.30 0.26 S22 ANG -1.17 -7.55 -6.51 20.06 63.42 73.27 68.70 59.98 49.76 38.34 26.63 14.30 1.81 -10.89 -23.72 -35.94 -47.13 -57.41
5
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
Recommended Bias Circuit and Internal Block Diagram
1000pF 50 VGG N.C.
RFin VDD
RFout
VDD 50 1000pF 50 1000pF
Note 1: The RC networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output. The two pins named VDD are internally connected.
PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD
6
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
Package Out Line
3 2 1
3
4 5 6
PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD Unit : mm
7
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others.
(c) 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200
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