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* High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc * Excellent DC Current Gain -- hFE = 30 - 240 @ IC = 50 mAdc * Plastic Thermopad Package ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS
ON CHARACTERISTICS OFF CHARACTERISTICS Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Collector Current -- Continuous Emitter-Base Voltage Collector-Emitter Voltage DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) Characteristic Characteristic Rating VCEO(sus) Symbol Symbol Symbol TJ, Tstg VCEO ICBO IEBO VEB hFE JC PD IC Min 300 30 -- -- - 65 to + 150 Value 6.25 Max 20 0.16 500 300 3.0 CASE 77-08 TO-225AA TYPE Max 240 100 100 -- mAdc Watts W/_C
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data . . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Plastic Medium Power PNP Silicon Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS
MJE350
Order this document by MJE350/D
_C/W
Adc
Adc
Unit
Unit
Unit
Vdc
Vdc
Vdc
_C
--
1
MJE350
200 TJ = 150C 25C V, VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V
hFE , DC CURRENT GAIN
100 70 50 30 20
- 55C
0.4
IC/IB = 10
VCE = 2.0 V VCC = 10 V 50 70 100 200 20 30 IC, COLLECTOR CURRENT (mA) 300 500
0.2 VCE(sat) 0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5.0 200 300 500
10 5.0 7.0 10
Figure 1. DC Current Gain
Figure 2. "On" Voltages
V, TEMPERATURE COEFFICIENTS (mV/C)
IC, COLLECTOR CURRENT (mA)
1000 700 500 300 200 100 70 50 30 20 10 20 1.0 ms dc
+ 1.2 100 s + 0.8 + 0.4 0 - 0.4 - 0.8 - 1.2 - 1.6 - 2.0 - 2.4 - 2.8 5.0 7.0 10 VB for VBE - 55C to + 25C 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 + 25C to + 150C *VC for VCE(sat) - 55C to + 25C *APPLIES FOR IC/IB < hFE/4 + 100C to + 150C + 25C to + 100C
500 s TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 30 70 300 400 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active-Region Safe Operating Area
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
20 PD, POWER DISSIPATION (WATTS)
16
12
v
8.0
4.0
0
0
20
40 60 80 100 120 TC, CASE TEMPERATURE (C)
140
160
Figure 5. Power Derating
2
Motorola Bipolar Power Transistor Device Data
MJE350
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
3
MJE350
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4
Motorola Bipolar Power Transistor Device Data
*MJE350/D*
MJE350/D

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