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PD - 94001A
IRF7705
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.2mm) Available in Tape & Reel
VDSS
-30V
RDS(on) max (m) )
18 @VGS = -10V 30 @VGS = -4.5V
ID
-8.0A -6.0A
Description
HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G
D
8 7
G
6
S
8= 7= 6= 5= D S S D
5
signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -8.0 -6.0 -30 1.5 0.96 0.012 20 -55 to + 150
Units
V A
W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
83
Units
C/W
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06/05/01
IRF7705
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. Typ. Max. Units Conditions -30 --- --- V VGS = 0V, ID = -250A --- 0.015 --- V/C Reference to 25C, ID = -1mA --- --- 18 VGS = -10V, ID = -8.0A m --- --- 30 VGS = -4.5V, ID = -6.0A -1.0 --- -2.5 V VDS = VGS, I D = -250A 13 --- --- S VDS = -10V, ID = -8.0A --- --- -15 VDS = -24V, VGS = 0V A --- --- -25 VDS = -24V, VGS = 0V, TJ = 70C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V --- 58 88 ID = -8.0A --- 10 --- nC VDS = -15V --- 9.0 --- VGS = -10V --- 18 27 VDD = -15V, VGS = -10V --- 35 53 ID = -1.0A ns --- 270 405 RD = 15 --- 128 190 RG = 6.0 --- 2774 --- VGS = 0V --- 418 --- pF VDS = -25V --- 270 --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 36 34 -1.5 A -30 -1.2 54 50 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width 400s; duty cycle 2%.
2
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IRF7705
100
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
100
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
10
1
-2.5V
0.1
-2.5V
1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -8.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
1.0
1
TJ = 25 C
0.5
0.1 2.0
V DS = -15V 20s PULSE WIDTH 3.5 4.0 2.5 3.0 4.5
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7705
4000
3200
C, Capacitance (pF)
Ciss
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
16
ID = 8.0A
VDS = -24V VDS = -15V
12
2400
8
1600
800
C oss C rss
4
0 1 10 100
0 0 10 20 30 40 50 60 70 80
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
-ID , Drain Current (A) I
TJ = 150 C
100us
10
TJ = 25 C
1
1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7705
8.0
VDS VGS
6.0
RD
D.U.T.
+
-I D , Drain Current (A)
4.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
VGS 10%
TC , Case Temperature
( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 1 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 1
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 10 100
P DM t1 t2 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
RG
VDD
5
IRF7705
R DS ( on ) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.08 0.07 0.06 0.05 0.04
0.06
0.04 VGS = -4.5V
ID = -8.0A
0.03 0.02 0.01 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS = -10V 0.02
0.00 0 10 20 30 40 50 -ID , Drain Current ( A )
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS VG
QGD
VGS
-3mA
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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+
10 V
D.U.T.
-
VDS
IRF7705
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
LOT CODE (XX) PART NUMBER
DAT E CODE (YW)
XXYW 7702
T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF
24 25 26
X Y Z
T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
O 13"
16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
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IRF7705
TSSOP-8 Package Outline
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/01
8
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