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NUP4301MR6T1 Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4301MR6T1 is a MicroIntegrationTM device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge).
Features http://onsemi.com PIN CONFIGURATION AND SCHEMATIC
* Low Capacitance (1.5 pf Maximum Between I/O Lines) * Single Package Integration Design * Provides ESD Protection for JEDEC Standards JESD22 * * * * * * * * * * * *
Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000-4-2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground USB 1.1 and 2.0 Data Line Protection T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection
I/O 1 VN 2 1/O 3
6 I/O 5 VP 4 I/O
6
5
4 3
MARKING DIAGRAM
Applications
1
2
64d
TSOP-6 CASE 318F PLASTIC
64 = Specific Device Code d = Date Code
ORDERING INFORMATION
Device NUP4301MR6T1 Package TSOP-6 Shipping 3000/Tape & Reel
MAXIMUM RATINGS (Each Diode) (TJ = 25C unless otherwise noted)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S 1. FR-5 = 1.0 0.75 0.062 in. Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 200 500 70 715 Unit Vdc mAdc mAdc V mA
IFRM IFSM
450 2.0 1.0 0.5
mA A
(c) Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 2
Publication Order Number: NUP4301MR6T1/D
NUP4301MR6T1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient Lead Solder Temperature Maximum 10 Seconds Duration Junction Temperature Storage Temperature Symbol RqJA TL TJ Tstg Max 556 260 -40 to +85 -55 to +150 Unit C/W C C C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Each Diode)
Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) V(BR) IR 70 0.8 1.6 2.5 30 50 1.5 3 715 855 1000 1250 Vdc mAdc Symbol Min Typ Max Unit
Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc)
CD CD VF
pF pF mVdc
1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
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NUP4301MR6T1
Curves Applicable to Each Cathode
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = -40C IR , REVERSE CURRENT (A) 10
TA = 150C TA = 125C
1.0
0.1
TA = 85C TA = 55C
1.0
TA = 25C
0.01 TA = 25C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
1.75 CD, DIODE CAPACITANCE (pF)
Figure 2. Leakage Current
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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NUP4301MR6T1
PACKAGE DIMENSIONS
TSOP-6 CASE 318F-04 ISSUE J
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F-01, -02, -03 OBSOLETE. NEW STANDARD 318F-04. DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00
A L
6 5 1 2 4
S
3
B
D G M 0.05 (0.002) H C K J
MicroIntegration is a trademarks of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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NUP4301MR6T1/D

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