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| 1SR159-200 Diodes Rectifier diode 1SR159-200 !Applications High frequency rectification. For switching power supply. !External dimensions (Units: mm) 1.50.2 CATHODE MARK !Features 1) Small surface mounting type. (PMDS) 2) Low VF. (VF=0.90V Typ. at 1A) 3) High speed. (trr=23ns Typ.) 4.50.2 1.20.3 6 3 3 4 0.1 +0.02 -0.1 2.00.2 2.60.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 1 2 Date code EX. 1999.19.1 !Absolute maximum ratings (Ta=25C) Parameter Absolute peak reverse voltage Peak reverse voltage Mean rectifying current1 Peak forward surge current2 Junction temperature Storage temperature Symbol VRSM VRM IO IFSM Tj Tstg Limits 200 200 1 20 150 -55+150 Unit V V A A C C 1 When mounted on an alumina PCB board 2 60 Hz for 1 !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - - - Typ. - - - Max. 0.98 10 50 Unit V A ns IF=1.0A VR=200V IF =IR =100mA Conditions 5.00.3 1SR159-200 Diodes !Electrical characteristic curves (Ta=25C) 10.00 1000.0 Ta=125C POWER DISSIPATION : Pd (W) 1.5 0.3 0.2 1.0 D=0.05 0.1 sin 0.5 0.8 DC FORWARD CURRENT : IF (A) 1.00 REVERSE CURRENT : IR (A) 100.0 Ta=75C 10.0 0.10 0.5 Tp IF IO d= Tp T 2.0 0.01 Ta=125C Ta=75C Ta=25C 0.00 0.0 1.0 Ta=25C 0.2 0.4 0.6 0.8 1.0 0.1 50 100 150 200 0 0 T 0.4 0.8 1.2 1.6 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Power dissipation curves AVERAGE RECTIFIED CURRENT : IO (A) 1.0 50 SURGE FORWARD CURRENT : IFSM (A) REVERSE RECOVERY TIME : trr (ns) 0.1 IR 0.25 IR 10 RE 0.8 40 SIS TIV E 0.6 CA PA 30 AN D IN DU TI CI 0.4 20 5 VE LO CT IVE LO AD 0.2 10 P=50% AD 0 0 25 50 100 150 200 0 1 2 5 10 20 50 100 0 0 0.5 1.0 1.5 AMBIENT TEMPERATURE : Ta (C) CYCLES (60 Hz) FORWARD CURRENT IF (A) Fig.4 Derating curve Fig.5 Maximum peak forward surge current characteristics Fig.6 Reverse recovery time characteristics |
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