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| TICP206 SERIES SILICON TRIACS Copyright (c) 1997, Power Innovations Limited, UK MARCH 1988 - REVISED MARCH 1997 q q q q q 1.5 A RMS Glass Passivated Wafer G LP PACKAGE (TOP VIEW) 1 2 3 400 V to 600 V Off-State Voltage Max IGT of 10 mA Package Options PACKAGE LP LP with fomed leads PACKING Bulk Tape and Reel PART # SUFFIX (None) R MT2 MT1 MDC2AA LP PACKAGE WITH FORMED LEADS (TOP VIEW) G MT2 MT1 MDC2AB 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) RATING Repetitive peak off-state voltage (see Note 1) Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Average gate power dissipation at (or below) 85C case temperature (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds TICP206D TICP206M SYMBOL VDRM IT(RMS) ITSM ITSM IGM P G(AV) TC Tstg TL VALUE 400 600 1.5 10 12 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V A A A A W C C C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 60 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak offstate current Peak gate trigger current VD = rated VDRM Vsupply = +12 V IGTM V supply = +12 V V supply = -12 V V supply = -12 V Vsupply = +12 V VGTM Peak gate trigger voltage V supply = +12 V V supply = -12 V V supply = -12 V All voltages are with respect to Main Terminal 1. TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s MIN TYP MAX 20 8 -8 -8 10 2.5 -2.5 -2.5 2.5 V mA UNIT A PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VTM IH IL Peak on-state voltage Holding current Latching current ITM = 1 A Vsupply = +12 V Vsupply = -12 V Vsupply = +12 V Vsupply = -12 V TEST CONDITIONS IG = 50 mA IG = 0 IG = 0 (see Note 7) (see Note 6) Init' ITM = 100 mA Init' ITM = -100 mA MIN TYP MAX 2.2 30 -30 40 -40 UNIT V mA mA All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs TEMPERATURE 1000 Vsupply IGTM IGT - Gate Trigger Current - mA + + + + TC05AA GATE TRIGGER VOLTAGE vs TEMPERATURE 10 Vsupply IGTM VGT - Gate Trigger Voltage - V + + + } } + TC05AB VAA = 12 V RL = 10 tp(g) = 20 s VAA = 12 V RL = 10 tp(g) = 20 s 100 10 1 1 0*1 -60 -40 -20 0 20 40 60 80 100 120 0*1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. PRODUCT INFORMATION 2 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS HOLDING CURRENT vs CASE TEMPERATURE 100 VAA = 12 V IH - Holding Current - mA IG = 0 Initiating ITM = 100 mA 10 VGF - Gate Forward Voltage - V TC05AD GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT 10 TC05AC 1 1 Vsupply + - 0*1 IA = 0 TC = 25 C 0*1 -60 -40 -20 0 20 40 60 80 100 120 QUADRANT 1 0*01 0*0001 0*001 0*01 0*1 1 TC - Case Temperature - C IGF - Gate Forward Current - A Figure 3. Figure 4. LATCHING CURRENT vs CASE TEMPERATURE 100 Vsupply IGTM + + + + TC05AE VAA = 12 V IL - Latching Current - mA 10 1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 5. PRODUCT INFORMATION 3 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 (TO-92) 5,21 4,44 3,43 MIN. 2,67 2,03 4,19 3,17 2,67 2,03 LP003 Falls Within JEDEC TO-226AA Dimensions Seating Plane 5,34 4,32 1,27 A) (see Note A) 12,7 MIN. 0,56 0,40 1 3 1,40 1,14 2,67 2,41 2 0,41 0,35 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: Lead dimensions are not controlled in this area. MDXXAX PRODUCT INFORMATION 4 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 (TO-92) - Formed Leads Version 5,21 4,44 3,43 MIN. 2,67 2,03 4,19 3,17 2,67 2,03 LP003 Falls Within JEDEC TO-226AA Dimensions 5,34 4,32 4,00 MAX. 0,56 0,40 1 2 3 2,90 2,40 0,41 0,35 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAR PRODUCT INFORMATION 5 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 MECHANICAL DATA LPR tape dimensions LP Package (TO-92) Tape (Formed Lead Version) 5,21 4,44 3,43 MIN. 2,67 2,03 5,34 4,32 4,19 3,17 2,67 2,03 4,00 MAX. 0,56 0,40 0,41 0,35 13,70 11,70 32,00 23,00 27,68 17,66 2,50 MIN. 16,50 15,50 11,00 8,50 9,75 8,50 0,50 0,00 19,00 5,50 19,00 17,50 2,90 2,40 2,90 2,40 6,75 5,95 13,00 12,40 o 4,30 3,70 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAS PRODUCT INFORMATION 6 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7 |
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