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DCR818SG DCR818SG Phase Control Thyristor Advance Information Supersedes October 2000 version, DS4241-5.1 DS4241-6.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 4800V 529A 7500A 1000V/s 150A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers *Higher dV/dt selections available VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 4800 4700 4600 4500 4400 Conditions DCR818SG48 DCR818SG47 DCR818SG46 DCR818SG45 DCR818SG44 Tvj = 0 to 125C, IDRM = IRRM = 75mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Outline type code: G. See Package Details for further information. Fig.1 Package outline Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR818SG46 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR818SG CURRENT RATINGS Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 529 830 756 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 349 548 464 A A A CURRENT RATINGS Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 425 667 595 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 285 447 360 A A A 2/8 www.dynexsemi.com DCR818SG SURGE RATINGS Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 6.0 0.18 x 106 7.5 0.28 x 106 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 10.8 125 125 13.2 o Min. dc Anode dc - Max. 0.032 0.064 0.064 0.008 0.016 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN 3/8 www.dynexsemi.com DCR818SG DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to1000A Gate source 20V, 10 tr 0.5s. Tj = 125oC. At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 Rise time 0.5s, Tj = 25oC Tj = 25oC, VD = 5V, Gate source = 20V, 10 Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. 100 60 Max. 50 1000 75 150 1.4 1.7 1.7 1000 500 Units mA V/s A/s A/s V m s mA mA s dI/dt Rate of rise of on-state current VT(TO) rT tgd IL IH tq Threshold voltage On-state slope resistance Delay time Latching current Holding current IT = 1000A, tp = 1ms, Tj = 125C, Turn-off time VRM = 100V, dIRR/dt = 10A/s, dVDR/dt = 20V/s to 3000V 450 - GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, fig.5 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.0 300 0.25 30 0.25 5 10 150 5 Units V mA V V V V A W W 4/8 www.dynexsemi.com DCR818SG CURVES 2500 Measured under pulse conditions Tj = 125C 2000 d.c. Half wave 2000 Instantaneous on-state current, IT - (A) 1500 Mean power dissipation - (W) 3 phase 1500 6 phase 1000 1000 500 500 0 0 1.0 3.0 2.0 4.0 5.0 Instantaneous on-state voltage, VT - (V) 6.0 0 0 200 400 600 800 Mean on-state current, IT(AV) - (A) Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT A = 0.650046 B = -0.018621 C = 0.000589 D = 0.063601 these values are valid for Tj = 125C for IT 500A to 2500A Where 5/8 www.dynexsemi.com DCR818SG 10000 Conditions: Tj = 125C QS is total integral stored charge IT = 1000A VR = 100V 100 Table gives pulse power PGM in Watts Pulse width s 100 200 500 1ms 10ms Frequency Hz 50 100 400 150 150 150 150 150 125 150 150 100 150 100 25 20 10 0W 15 0W 50 25 W W 10 4W W Total stored charge, QS - (C) Gate trigger voltage, VGT - (V) 2W 10 Tj = -40C 1000 Tj = 25C 99 % Tj = 125C 1% 1 U pp er lim it IT QS tp = 1ms dI/dt VGD Lo w er lim it 100 0.1 IRM 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) 100 0.1 0.001 0.01 0.1 1 Gate trigger current, IGT - (A) 10 IFGM Fig.4 Stored charge 0.1 Anode side cooled Fig.5 Gate characteristics 12.5 I2t = I2 x t 2 10.0 Thermal Impedance - junction to case - (C/W) Double side cooled Peak half sine wave on-state current - (kA) 7.5 200 0.01 I2t value - (A2s x 103) 5.0 I2t 2.5 150 Conduction Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 100 d.c. Halfwave 3 phase 120 6 phase 60 0.001 0.001 0.01 0.1 Time - (s) 1.0 10 0 1 ms 10 1 2 3 45 10 50 20 30 50 Cycles at 50Hz Duration Fig.6 Transient thermal impedance - junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C) 6/8 www.dynexsemi.com DCR818SG PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes fl3.6x2.0 deep (in both electrodes) Cathode tab Cathode fl58.5 max fl34 nom fl1.5 Gate 27.0 25.4 fl34 nom Nominal weight: 250g Clamping force: 12kN 10% Lead lenght: 420mm Lead terminal connector: M4 ring Package outline type code: G Anode 7/8 www.dynexsemi.com DCR818SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4241-6 Issue No. 6.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com |
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