| PART |
Description |
Maker |
| STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode
|
ST Microelectronics
STMicroelectronics
|
| STGWT30H65FB STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
|
ST Microelectronics
|
| STGP15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
| AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
| STGD4M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
|
STMicroelectronics
|
| STGF15M65DF2 |
Trench gate field-stop IGBT M series, 650 V 15 A low loss
|
STMicroelectronics
|
| 2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
| FF1400R12IP4 |
IGBT Modules up to 1200V Dual ; Package: AG-PRIME3-1; IC (max): 1,400.0 A; VCE(sat) (typ): 1.75 V; Configuration: Dual Modules; Technology: IGBT4; Housing: PrimePACK 3;
PrimePACK? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
PrimePACK?? Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
|
Infineon Technologies AG
|
| STB8N65M5 STI8N65M5 STF8N65M5 |
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in D2PAK
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in I2PAK
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in TO-220FP
|
ST Microelectronics
|
| STF15N65M5 STP15N65M5 STFI15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in I2PAKFP package
N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
|
ST Microelectronics
STMicroelectronics
|
| STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 CD0022 |
High dv/dt capability
N-channel 650 V, 0.070 Ω, 33 A MDmesh?V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N-channel 650 V, 0.070 Ω, 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK
|
STMicroelectronics
ST Microelectronics
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
