| PART |
Description |
Maker |
| P500-G200-WH P850-G200-WH P850-G120-WH P500-G120-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CZT2000 |
PNP Silicon Extremely High Voltage Darlington Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| CMPTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| STBP60L60A |
Super high dense cell design for extremely low RDS(ON).7
|
SamHop Microelectronics...
|
