| PART |
Description |
Maker |
| MTD64 MW6S004NT107 MW6S004NT1 |
Low Voltage 22-Bit Register with 3.6V Tolerant Inputs and Outputs
RF Power Field Effect Transistor
|
FAIRCHILD
FREESCALE[Freescale Semiconductor, Inc]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MP840 MP842 MP841 |
(MP840 - MP842) Low Noise Low Drift Monolithic Dual Silicon Nitrox Field Effect Transistors
|
MPS
|
| MGSF3455XT1 MGSF3455XT1-D MGSF3455XT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
Motorola, Inc.
ON Semiconductor
|
| DMG3402L-13 DMG3402L-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Low On-Resistance
|
Diodes Incorporated
|
| MTP30N08M |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF1511T1 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司
|
| MTM25N10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| MTM20P10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
