| PART |
Description |
Maker |
| BUK9528-55 |
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
|
NXP Semiconductors N.V.
|
| BUK9775-55 BUK9775-56 |
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS（商标）场效应晶体管逻辑电平TrenchMOS（商标）晶体管逻辑电平场效应管
TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KUK7607-30B |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| KUK7606-55B |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| PSMN005-30K |
TrenchMOS(tm) logic level FET
TrenchMOS logic level FET
TrenchMOSTM logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
| HI3-0506A-5Z |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel,CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
|
