| PART |
Description |
Maker |
| 1140-4129 |
Barrel Form Punch
|
Molex Electronics Ltd.
|
| 11-18-2203 |
Barrel Form Punch
|
Molex Electronics Ltd.
|
| FTR-B2NA4.5Z FTR-B2 FTR-B2MA012Z FTR-B2MA4.5Z FTR- |
4 POLE (2 FORM C 2 FORM A) SIGNAL RELAY FOR CENTRAL SWITCHING/ DATA TRANSMISSION
|
Fujitsu Limited
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| ALQ324 ALQ109 ALQ106 ALQ105 ALQ118 ALQ112 ALQ124 A |
1 Form A/1 Form C 10A Small power relays
|
Panasonic Semiconductor
|
| AQY410EH AQY414EHAZ AQY410EHA AQY410EHAX AQY410EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA.
GU (General Use)-E Type 1-Channel (Form B) 4-pin Type 顾（一般使用）- E通道（表B针型
GU (General Use)-E Type 1-Channel (Form B) 4-pin Type 顾（一般使用）- E1通道（表B针型
|
Matsushita Electric Works(Nais)
NASI
NAIS[Nais(Matsushita Electric Works)]
Panasonic, Corp.
Electronic Theatre Controls, Inc.
|
| 0-1721956-6 0-1721150-5 0-1721150-2 0-1721150-8 0- |
Compact relay with 1 Form A and 1 Form C contact arrangement
|
TE Connectivity Ltd
|
| EBD26UC6AKSA-E EBD26UC6AKSA-6B-E EBD26UC6AKSA-7A-E |
Single Pole Normally Open: 1-Form-A, 400V
Single Pole Normally Open: 1-Form-A, 600V
256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| AQW614 AQW614A AQW614AX AQW614AZ |
GU (General Use) Type [2-Channel (Form A Form B) Type]
|
Matsushita Electric Works(Nais)
ETC
NAIS[Nais(Matsushita Electric Works)]
|
| 63910-2700 63910-2770 63860-1100 63860-1170 63860- |
Punch
|
Molex Electronics Ltd.
|
| 63444-0805 |
Punch
|
Molex Electronics Ltd.
|
| 63910-2970 63860-1470 63860-1400 |
Punch
|
Molex Electronics Ltd.
|
