| PART |
Description |
Maker |
| 1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9
Diode Switching 100V 240A 2-Pin DO-9
Diode Switching 1KV 300A 2-Pin DO-9
Diode Switching 1.4KV 240A 2-Pin DO-9
Diode Switching 300V 240A 2-Pin DO-9
Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
| NTE325 |
Silicon NPN RF Power Transistor 50W @ 30MHz
|
NTE[NTE Electronics]
|
| NTE471 |
Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| RD00HHS110 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| D240SC6M |
Schottky Rectifiers (SBD) (60V 240A) 肖特基二极管SBD智能交通）0V40A章）
|
Shindengen Electric Manufacturing Co., Ltd.
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| MRF429 |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
|
M/A-COM Technology Solu...
|
| HFA240NJ40D |
400V 240A HEXFRED Doubler Diode in a TO-244AB Non-Isolated package
|
International Rectifier
|
| 2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| 2SC2879A |
SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) 硅型瑞展230MHz的办学线性功率放大器应用（低电源电压使用
|
Toshiba, Corp.
Toshiba Semiconductor
|
| HERF1601G HERF1602G HERF1608G HERF1603G HERF1604G |
Rectifier: High Efficient
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers
|
TSC[Taiwan Semiconductor Company, Ltd]
|
