PART |
Description |
Maker |
1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9 Diode Switching 100V 240A 2-Pin DO-9 Diode Switching 1KV 300A 2-Pin DO-9 Diode Switching 1.4KV 240A 2-Pin DO-9 Diode Switching 300V 240A 2-Pin DO-9 Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
1N4392 1N4404 1N4411 1N4421 1N4402 1N4405 1N4403 1 |
DIODE SWITCHING DIODE 0.5A 2DO-17 Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R Diode Zener Single 68V 5% 1.5W 2-Pin DO-41 Diode Rectifier Bridge Single 200V 10A
|
New Jersey Semiconductor
|
MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
MMBD4448HW-7-F |
Switching Diodes SURFACE MOUNT SWITCHING DIODE 0.25 A, 80 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
M1MA142WKT1 M1MA141WK M1MA141WKT1 ON0326 M1MA141WK |
From old datasheet system SC-70/SOT-323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT COMMON CATHODE DUAL SWITCHING DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc
|
CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
CPD83V10 |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
70HFL100 70HFLR100S05 70HFLR10S02 70HFL40 |
Diode Switching 100V 70A 2-Pin DO-5 Diode Switching 1KV 70A 2-Pin DO-5 Diode Switching 400V 70A 2-Pin DO-5
|
New Jersey Semiconductor
|
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|