| PART |
Description |
Maker |
| ZXGD3005E6 ZXGD3005E6TA ZXGD3005E611 ZXGD3005E6-15 |
25V 10A GATE DRIVER IN SOT26
|
Diodes Incorporated
|
| ZXGD3006 ZXGD3006E6 |
High current 40V Gate Driver reduces IGBT switching losses
|
Diodes Incorporated
|
| OM9402SP |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a SP-10A package
|
International Rectifier
|
| VC-710-DFF-GFM-200.000 VC-710 VC-710-DFC-GFA-125.0 |
CRYSTAL 20.0000 MHZ 18PF SMD 压控晶体振荡
CONNECTOR ACCESSORY 连接器附
Voltage Controlled Crystal Oscillator 压控晶体振荡
RECTIFIER SCHOTTKY DUAL 10A 45V 125A-ifsm 0.7V-vf 0.1mA-ir TO-220AB 50/TUBE 压控晶体振荡
RECTIFIER SCHOTTKY SINGLE 10A 40V 150A-ifsm 0.84V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY SINGLE 10A 45V 150A-ifsm 0.84V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY SINGLE 10A 50V 150A-ifsm 0.95V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY DUAL 10A 40V 125A-ifsm 0.7V-vf 0.1mA-ir TO-220AB 50/TUBE
XTAL CER SMT 6X3.5 2PAD
AB 6C 6#16 SKT PLUG
|
Electronic Theatre Controls, Inc.
ETC[ETC]
Vectron International, Inc
|
| SF10SC4 |
Schottky Rectifiers (SBD) (40V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| D10SC4M |
Schottky Rectifiers (SBD) (40V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| RQ3G100GNTB |
Nch 40V 10A Power MOSFET
|
ROHM
|
| HMC22610 HMC226E HMC226ETR |
GaAs MMIC 3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz
0 MHz - 2000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS
GaAs MMIC 3V SOT26 TRANSMT / RECEIVE SWITCH, DC - 2 GHz
GaAs MMIC 3V SOT26 TRANSMT / RECEIVE SWITCH, DC - 2 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| BTS5440G |
Smart High Side Switches - 4,5-28V(40V Loaddump), 4x25m? Limit(scr) 10A/40A P-DSO-28
Addendum for PCN-Datasheet 2004-018-A
|
Infineon Technologies AG
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| MBRF1045CT-G MBRF1030CT-G MBRF1060CT-G MBRF10100CT |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
|
Comchip Technology
|
