| PART |
Description |
Maker |
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| FDP100N10 |
N-Channel PowerTrenchMOSFET 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench? MOSFET
|
Fairchild Semiconductor, Corp.
|
| UT4812Z UT4812ZG-S08-R |
DUAL N-CHANNEL ENHANCEMENT MODE
30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE, SOP-8
|
Unisonic Technologies Co., Ltd.
|
| SIZ704DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs
9.4 A, 30 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| FDC6420 FDC6420C FDC6420CD84Z |
20V N & P-Channel PowerTrench MOSFETs
3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| MAX398CSEG55 |
Precision, 8-Channel/Dual 4-Channel, Low-Voltage, CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDSO16
|
Maxim Integrated Products, Inc.
|
| 2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
