| PART |
Description |
Maker |
| 600-052 |
600-052, 600-090, 600-057, 600-083,600-052-1, 600-090-1, 600-057-1 & 600-083-1 Clamping Bands
|
Glenair, Inc.
|
| CM600DU-12NFH |
Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| 6N60L-BTA3-R 6N60-BTA3-R 6N60L-BTA3-T 6N60-BTA3-T |
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 六点二安培，600/650伏特N通道MOSFET
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| QRS0660T30 |
Fast Recovery Diode Module (600 Amp/600 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| CM75DY-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| J60030-2P J60030-3S J60030-1PR J60030-2PR J60030-2 |
Class J Fuseblocks 600 Volt, ú 600 Amps
Class J Fuseblocks 600 Volt, ú-600 Amps
Fuse 0.5 TO 30A 600V CLASS J
|
Cooper Bussmann, Inc.
|
| P6SMB6.8AT3 P6SMB130AT3 |
600 Watt Peak Power Zener Transient Voltage Suppressors(峰值功00W，齐纳TVS) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
ON Semiconductor
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NDL5551 NDL5551P NDL5551P1C NDL5551P1D NDL5551P2C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信50毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
