| PART |
Description |
Maker |
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| 02-0274-0100 01-0109-0100 01-0109-01SD |
CAS-2000 Comprehensive Application System
|
JDS Uniphase Corporation
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM44C4005C KM44C4105C KM44C4005CK-6 KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| MT4C4004 |
1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| KMM5364005CK |
(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| KM44C1005D |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM47EM1688SBB-150A EM47EM1688SBB-125E |
CAS Write Latency
|
Eorex Corporation
|
