PART |
Description |
Maker |
MSA-2035 MSA-2011 |
Silicon Bipolar RFIC Amplifiers(硅双极型射频电路放大 (MSA-20xx) Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent(Hewlett-Packard)
|
2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
UPC1652G |
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOP,8PIN,PLASTIC From old datasheet system
|
NEC Corp. NEC Electron Devices
|
STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器) Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器) RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
|
82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. 1K BIT TTL BIPOLAR PROM
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
BUX13 |
5V, 500mA low drop voltage regulator Bipolar NPN Device in a Bipolar NPN Device in a Metal Package
|
Seme LAB
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
MSA-0335 MSA-0336 MSA-0336-BLK MSA-0336-TR1 |
Cascadable Silicon Bipolar MMIC Amplifiers (MSA-0335 / MSA-0336) Cascadable Silicon Bipolar MMIC Amplifier LINEAR SUPPLY 15V/3.0A OUTPUT
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
TA31142FN TA31142F |
IF AMPLIFIER,BIPOLAR,SSOP,20PIN,PLASTIC IF AMPLIFIER,BIPOLAR,SOP,20PIN,PLASTIC From old datasheet system
|
Toshiba America Electronic Components, Inc.
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|