| PART |
Description |
Maker |
| CSB834 CSB834O CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y
|
Continental Device India Limited
|
| CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
|
Continental Device India Limited
|
| HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASI10685 ULBM45 ASI10653 TVU150A |
NPN Silicon RF Power Transistor(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CD931Y CD2331Y |
0.900W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 120 - 240 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| 2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE.
|
Isahaya Electronics Corporation
|
| 2SA1290 |
60V/7A High-Speed Switching Applications 60V/7A高速开关应
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
| 2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
POWER TRANSISTORS(3.0A/60V/30W)
POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| KSA733R KSA733Y KSA733 KSA733CG KSA733CL KSA733CO |
PNP Epitaxial Silicon Transistor
Low Frequency Amplifier 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Collector-Base Voltage : VCBO= -60V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
