| PART |
Description |
Maker |
| CXG1172UR |
JPHEMT High Power DPDT Switch with Logic Control
Hight Frequency Switch
|
Sony Corporation
|
| BTS4141D Q67060-S6098 |
Smart High-Side Power Switch 1 Channel: 1 x 200m?/a>
Smart High Side Switches - 1x 200m? 12-45V P-TO-252
Smart High-Side Power Switch 1 Channel: 1 x 200mз
POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82%
|
INFINEON[Infineon Technologies AG]
|
| CXG1024N |
High-Frequency SPDT Antenna Switch
|
SONY
|
| CXG1006N |
High-Frequency SPDT Antenna Switch
|
SONY
|
| CXG1024N |
High-Frequency SPDT Antenna Switch
|
http://
SONY[Sony Corporation]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KSC2609A KSA2690 KSC2690Y KSC2690A KSC2690 KSC2690 |
NPN Epitaxial Silicon Transistor
Audio Frequency High Frequency Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
COSMO Electronics Corporation
Fairchild Semiconductor Corporation
|
| KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CXG1104TN |
High Power Antenna Switch MMIC(SPDT Switch with Logic Control)For Use In Cellular Handsets(大功率天线开关微波集成电带逻辑控制的单刀双掷开关，用于蜂窝式手机）) 高功率天线单片开关（单刀双掷开关逻辑控制），用于蜂窝手机的使用（大功率天线开关微波集成电路（带逻辑控制的单刀双掷开关，用于蜂窝式手机）
High Power SPDT Switch with Logic Control
|
Sony, Corp.
|
| FIT80-4 |
Switch mode/High Frequency Toroidal Inductor
|
TRIAD MAGNETICS
|
|
