| PART |
Description |
Maker |
| KD103AW KD103BW |
Guard ring construction for transient protection
|
TY Semiconductor Co., Ltd
|
| MBR830 MBR860 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
|
| MBR0540W |
Low forward voltage drop, Guard ring construction forTransient protection
|
TY Semiconductor Co., L...
|
| SD103AWS |
Low Forward Voltage Drop Guard Ring Construction for Transient protection
|
SHIKE Electronics
|
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| MBR20H100CT MBR20H200CT |
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection
|
Taiwan Semiconductor Co...
|
| 1N5177W |
Low Forward Voltage Drop Guard Ring Constuction for Transient Protection
|
TY Semiconductor Co., Ltd
|
| BAT64-07 BAT6407 Q62702-A964 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BTA854W BAT854CW BAT854W BAT854AW BAT854SW |
Very low forward voltage Very low reverse current Guard ring protected
|
TY Semiconductor Co., Ltd
|
| 444CNQ040 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
| 191640306 191640844 191640845 191640419 19164-0003 |
RING TONGUE TERMINAL PERMA-SEAL NIAC 22-18 AWG
CONN RING SEALABLE #10 18-22AWG 0.8 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL
|
Molex Electronics Ltd.
Molex, Inc.
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
