PART |
Description |
Maker |
AWT9221S11 AWT921S11 |
Integrated high power amp 900 MHz Integrated High Power Amp 900 MHz Advanced Product information
|
Anadigics Inc
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
NCP1081 NCP1081DEG NCP1081DER2G |
Integrated 40 W High Power PoE-PD & DC-DC Converter Controller (IEEE 802.3at Draft 3.0) SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO20 Integrated High Power PoE-PD Interface & DC-DC Converter Controller
|
ON Semiconductor
|
MRFIC0914 |
900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
IP2005ATRPBF |
High Frequency Synchronous Buck Optimized LGA Power Stage with Integrated Power Semiconductors, Driver IC, & Passives
|
International Rectifier
|
LT1226CS8TR LT1122CCS8 |
Low Noise Very High Speed Operational Amplifier; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 1000 uV OFFSET-MAX, 1000 MHz BAND WIDTH, PDSO8 OP-AMP, 900 uV OFFSET-MAX, 13 MHz BAND WIDTH, PDSO8
|
Linear Technology, Corp. LINEAR TECHNOLOGY CORP
|
TC1426CPA TC1427 TC1427CPA TC1428 TC1428COA TC1427 |
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 600 A rms nominal, ±900 A range 1.2A的双路高速MOSFET驱动 1.2A Dual High-Speed MOSFET Drivers 1.2A的双路高速MOSFET驱动 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ...
|
Microchip Technology, Inc. MICROCHIP[Microchip Technology]
|
3032 3032SERIES 3032-6017-00 3032-6019-00 |
CRYSTAL, 3.686400MHZ 20PF HC-49 90?Crossover Hybrid Coupler 800-900锛?890-960. or 1700-1900 MHz 90Crossover Hybrid Coupler 800-900890-960. or 1700-1900 MHz 90?交叉混合耦合800-90090-960。兆赫或1700年至00 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 90?交叉混合耦合800-90090-960。兆赫或1700年至00 90 CROSSOVER HYBRID COUPLER 800-900/890-960/ OR 1700-1900 MHZ 90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ
|
PHOENIX CONTACT Deutschland GmbH Tyco Electronics
|
EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
2SK2218 2SK2218-5 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset High-Frequency Low-Noise Amp Applications
|
Sanyo Semicon Device
|