PART |
Description |
Maker |
3DD101B |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
|
Inchange Semiconductor ...
|
BD950 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min)
|
Inchange Semiconductor ...
|
BUY24 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min.)
|
Inchange Semiconductor ...
|
3DD15 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
|
Inchange Semiconductor ...
|
Q62702-C1659 BCX41 BSS64 Q62702-S535 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SB502 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min)
|
Inchange Semiconductor ...
|
HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
PS2533-1 PS2533-1-V PS2533-2 PS2533-2-V PS2533-4 P |
High Collector To Emitter Voltage Photocoupler(高集电极到发射极电压光电耦合 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES
|
NEC Corp. NEC[NEC]
|
BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|